• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of nano research >A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor
【24h】

A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor

机译：无结和p-i-n隧穿碳纳米管场效应晶体管的比较数值研究

获取原文
获取原文并翻译 | 示例
       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper, a gate-all-around junctionless tunnel field effect transistor (JL-TFET) based on carbon nanotube (CNT) material is introduced and simulated. The JL-TFET is a CNT-channel heavily n-type-doped junctionless field effect transistor (JLFET) which utilizes two insulated gates (Control-Gate, P-Gate) with two different metal workfunctions in order to treat like tunnel field effect transistor (TFET). In this design, the privileges of JLTFET and TFET are mixed together. The numerical comparative study on the performance characteristics of JL-TFET and conventional p-i-n TFET demonstrated that the proposed JL-TFET has a higher ON-state current driveability (ION), a larger ON/OFF-current ratio (I-ON/I-OFF), a lower drain induced barrier lowering (DIBL), a shorter delay time (tau), and also a superior cut-off frequency (f(T)). Moreover, in order to further performance improvement of proposed JLTFET, three novel device structures namely as junctionless linear descending gate workfunction TFET (JL-LDWTFET), junctionless linear ascending gate workfunction TFET (JL-LAWTFET) and junctionless triple metal gate TFET (JL-TMGTFET) are proposed by gate workfunction engineering approach. According to simulation results, the JL-TMGTFET with the gate composed of three segments of different work functions shows excellent characteristics with high ION/IOFF ratio, a superior ambipolar characteristic, a shorter delay time and a better cut-off frequency compared to conventional p-i-n TFET and other proposed junctionless-based features. All the simulations are done with the full quantum mechanical simulator for a channel length of 60-nm using nonequilibrium Green's function (NEGF) method.
机译：本文介绍并仿真了基于碳纳米管（CNT）材料的全栅无结隧穿场效应晶体管（JL-TFET）。 JL-TFET是CNT沟道重掺杂n型掺杂的无结场效应晶体管（JLFET），它利用具有两个不同金属功函数的两个绝缘栅（Control-Gate，P-Gate）来处理隧道效应晶体管。 （TFET）。在此设计中，JLTFET和TFET的特权混合在一起。对JL-TFET和常规管脚TFET的性能进行数值比较研究表明，所提出的JL-TFET具有更高的导通电流驱动能力（ION），更大的导通/截止电流比（I-ON / I- OFF），较低的漏极诱导势垒降低（DIBL），较短的延迟时间（tau）以及较高的截止频率（f（T））。此外，为了进一步改善拟议的JLTFET的性能，采用了三种新颖的器件结构，即无结线性降序栅极功函数TFET（JL-LDWTFET），无结线性升序栅极功函数TFET（JL-LAWTFET）和无结三重金属栅极TFET（JL- TMGTFET）是通过栅极功函数工程方法提出的。根据仿真结果，与传统引脚相比，具有由三部分不同功函数组成的栅极的JL-TMGTFET具有出色的特性，具有高ION / IOFF比，优异的双极性特性，较短的延迟时间和更好的截止频率TFET和其他建议的基于无结的功能。所有仿真都是使用非平​​衡格林函数（NEGF）方法使用60纳米通道长度的全量子力学仿真器完成的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号