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首页> 外文期刊>Journal of nano research >Electron Transport through Thin SiO2 Films Containing Si Nanoclusters
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Electron Transport through Thin SiO2 Films Containing Si Nanoclusters

机译：电子通过含Si纳米团簇的SiO2薄膜的电子传输

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摘要

The electron transport mechanisms through nanocomposite SiO2(Si) films containing Si nanoclusters in the dielectric SiO2 matrix have been investigated. SiO2(Si) films were obtained by oxide assisted growth. At the first stage the SiOx films with different content of excess Si were deposited by LP CVD method. The second stage includes high temperature (T=1100 degrees C) annealing of SiOx films that promotes the formation of Si nanocrystals. Current transport through SiO2(Si) films was studied in the temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends both on the voltage and temperature. The Mott's conductivity caused by traps near Fermi level was revealed in low-voltage range for all temperatures. At increasing the voltage the space-charge limited current (SCLC) conductivity is observed for films with higher content of excess silicon while in case of low content of Si the Pool-Frenkel mechanism dominates. The further increase in the voltage results in a double carrier injection.
机译：研究了介电SiO2基体中含Si纳米团簇的纳米复合SiO2（Si）薄膜的电子传输机理。通过氧化物辅助生长获得SiO 2（Si）膜。在第一阶段，通过LP CVD方法沉积具有不同含量的过量Si的SiO x膜。第二阶段包括对SiOx膜进行高温（T = 1100摄氏度）退火，以促进形成Si纳米晶体。在100-350 K的温度范围内研究了通过SiO2（Si）薄膜的电流传输。据观察，电子传输的主要机理取决于电压和温度。在所有温度下的低压范围内，都显示出由费米能级附近的陷阱引起的莫特电导率。随着电压的升高，对于过量硅含量较高的薄膜，可以观察到空间电荷限制电流（SCLC）电导率，而在Si含量低的情况下，Pool-Frenkel机理占主导。电压的进一步增加导致双载流子注入。

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