THERMAL STRESSES IN MICROELECTRONICS SUBASSEMBLIES: QUANTITATIVE CHARACTERIZATION USING PHOTOMECHANICS METHODS

Bongtae Han

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THERMAL STRESSES IN MICROELECTRONICS SUBASSEMBLIES: QUANTITATIVE CHARACTERIZATION USING PHOTOMECHANICS METHODS

机译：微电子亚组件中的热应力：使用光力学方法定量表征

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Several optical methods for in-situ displacement measurement are presented as a tool to characterize thermomechanical behavior of microelectronics subassemblies. Features and recent developments of the methods are reviewed and applications to diverse problems are illustrated to demonstrate wide applicability of the methods. The whole-field displacement information, with various sensitivity and resolution scales, is ideally suited for the deformation study of a broad range of problems in microelectronics packaging. The methods are mature and they can be practiced routinely. More applications are anticipated.

机译：介绍了几种用于原位位移测量的光学方法，作为表征微电子子组件热力学行为的工具。回顾了该方法的特点和最新发展，并举例说明了对各种问题的应用，以证明该方法的广泛适用性。具有各种灵敏度和分辨率范围的全场位移信息非常适合用于微电子封装中各种问题的变形研究。该方法是成熟的，并且可以常规地实践。预计会有更多的应用。

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来源
《Journal of thermal stresses》 |2003年第6期|p.583-613|共31页
作者
Bongtae Han;
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作者单位

CALCE Electronics Products and Systems Center, Mechanical Engineering Department, University of Maryland, College Park, MD 20742;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类热力工程、热机;
关键词
far infrared fizeau interferometry; interconnections; microelectronics packaging; microscopic moire interferometry; moire interferometry; photomechanics methods; shadow moire; twyman/green interferometry;

机译：远红外菲索干涉法;互连;微电子封装;显微莫尔干涉仪;莫尔干涉仪;光机械方法;阴影莫尔仪;惠曼/绿色干涉仪;

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THERMAL STRESSES IN MICROELECTRONICS SUBASSEMBLIES: QUANTITATIVE CHARACTERIZATION USING PHOTOMECHANICS METHODS

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