首页> 外文期刊>Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films >Energy and material dependence of the inelastic mean free path of low‐energy electrons in solids
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Energy and material dependence of the inelastic mean free path of low‐energy electrons in solids

机译:固体中低能电子的非弹性平均自由程的能量和材料依赖性

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Calculations have been made of the inelastic mean free paths (IMFP’s) of 100–2000‐eV electrons in C, Mg, Al, Al2O3, Cu, Ag, Au, and Bi. These calculations have been based on experimental optical data and on theory. The optical data gives the dependence of the differential inelastic scattering cross section at zero momentum transfer on electron energy loss; the data used here satisfy optical sum rules closely. Theory is needed to specify the dependence of the differential inelastic scattering cross section on momentum transfer; results for free‐electron‐like solids were assumed to be applicable to the present materials. The calculated IMFP’s show significant deviations from the dependencies on electron energy and material expected from the formulas of Seah and Dench, Szajman et al., and Ashley.
机译:已经计算出C,Mg,Al,Al2O3,Cu,Ag,Au和Bi中100-2000eV电子的非弹性平均自由程(IMFP)。这些计算基于实验光学数据和理论。光学数据给出了零动量传递时微分非弹性散射截面对电子能量损失的依赖性。这里使用的数据非常满足光学和规则。需要用理论来说明微分非弹性散射截面对动量传递的依赖性。假定类似自由电子的固体的结果适用于本材料。计算得出的IMFP与Seah和Dench,Szajman等人和Ashley的公式所期望的对电子能量和材料的依赖性存在显着偏差。

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