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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks
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Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks

机译：用铁蛋白铁芯掩模制备中性束刻蚀条件以制备直径为7 nm的纳米柱结构

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We fabricated nanocolumn structure by using a low energy neutral beam and a ferritin iron-core mask. By using Cl_2 gas plasma for generating neutral beam, we obtained a better etching profile than with SF_6 gas plasma. Though Cl_2: SF_6=90:10 enabled faster etching than Cl_2 gas without degrading the etching profile when the etching depth was 25 nm, a mixture with any quantity of SF_6 gas resulted in a poor etching profile when the etching depth was 50 nm. The beam energy was optimized for the 50-nm depth using Cl_2 gas by changing the rf bias power to the bottom electrode of the neutral-beam source. Using the optimum beam energy, extremely high etching selectivity of the Si to ferritin iron-core masks (about 80) as well as highly anisotropic etching profile could be realized. As a result, the diameter of the top of the Si nanocolumn structure was 7 nm, which was identical to that of the iron core in the ferritin. Additionally, the etching profile was almost vertical. We were also able to achieve a high aspect ratio of about 4.6. It is very difficult for conventional plasma etching processes to fabricate such fine structure, because the high-energy photons enhanced the etching of the iron-core mask in the conventional plasma processes.
机译：我们通过使用低能中性束和铁蛋白铁芯掩模制造了纳米柱结构。通过使用Cl_2气体等离子体产生中性束，我们获得了比SF_6气体等离子体更好的刻蚀轮廓。尽管当蚀刻深度为25 nm时Cl_2：SF_6 = 90：10的蚀刻速度比Cl_2气体快，且不会降低蚀刻轮廓，但是当蚀刻深度为50 nm时，与任何数量的SF_6气体混合会导致蚀刻轮廓变差。通过更改到中性束源底部电极的射频偏置功率，使用Cl_2气体将束能量优化为50 nm深度。使用最佳束能量，可以实现硅对铁蛋白铁芯掩模的极高蚀刻选择性（约80）以及高度各向异性的蚀刻轮廓。结果，Si纳米柱结构的顶部的直径为7nm，其与铁蛋白中的铁核的直径相同。另外，蚀刻轮廓几乎是垂直的。我们还能够实现约4.6的高长宽比。常规的等离子体蚀刻工艺很难制造这种精细的结构，因为高能光子增强了常规等离子体工艺中铁芯掩模的蚀刻。

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