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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Selective growth of carbon nanotubes on silicon protrusions
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Selective growth of carbon nanotubes on silicon protrusions

机译：碳纳米管在硅突起上的选择性生长

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Selective growth of carbon nanotubes (CNTs) to required positions is a matter of importance for an application to electron sources for field emitter arrays. Although some techniques have been proposed concerning the selective growth of carbon nanotubes, they have complex processes and difficulties in reliability and controllability. We have developed the selective CNT growth technique, which consists of fabrication of pyramid-shaped protrusion arrays on silicon (Si) substrate by a liftoff process, selective deposition of metal catalyst film on the vertexes of the protrusions, and growth of the CNTs on the metal catalyst by chemical vapor deposition (CVD). Here we report the detailed growth characteristics of CNTs selectively grown by thermal CVD (TCVD) on vertexes of pyramid-shaped protrusions fabricated on Si substrate. The growth of CNTs by TCVD gave long, randomly oriented and dispersed CNT growth, which was completely different from growth regimes given by plasma enhanced CVD (PECVD), i.e., vertically aligned and bundled growth. The array of the CNTs grown by TCVD gave better field emission characteristics than that with the CNTs grown by PECVD. That was presumably because the CNTs grown by TCVD gave longer and more dispersive CNT growth than PECVD and consequently gave higher field enhancement on the CNTs. It is also shown that the single growth of the CNT is successfully performed using this process.
机译：碳纳米管（CNT）选择性生长至所需位置对于应用到场发射器阵列的电子源至关重要。尽管已经提出了一些关于碳纳米管选择性生长的技术，但是它们具有复杂的过程并且在可靠性和可控制性方面存在困难。我们已经开发了选择性CNT生长技术，该技术包括通过剥离工艺在硅（Si）衬底上制造金字塔形突起阵列，在突起的顶点上选择性沉积金属催化剂膜，以及在CNT上生长CNT。金属催化剂通过化学气相沉积（CVD）。在这里，我们报告通过热CVD（TCVD）在Si基板上制造的金字塔形突起的顶点选择性生长的CNT的详细生长特征。通过TCVD进行的CNT的生长产生了长，随机取向和分散的CNT生长，这与等离子增强CVD（PECVD）给出的生长方式（即垂直排列和成束生长）完全不同。通过TCVD生长的CNT阵列比通过PECVD生长的CNT具有更好的场发射特性。据推测，这是因为通过TCVD生长的CNT比PECVD具有更长，更分散的CNT生长，因此在CNT上具有更高的场增强作用。还显示出使用该方法成功地进行了CNT的单个生长。

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