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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide
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Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide

机译：镍和钛的厚度对n型碳化硅的镍/钛欧姆接触的影响

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摘要

Titaniumickel/titanium ohmic contacts to 4H n-SiC nitrogen doped to 3.55 X 10~(18) and 1.22 X 10~(19) cm~(-3) have been studied. As-deposited Ti/Ni/Ti/SiC structures were rectifying, but became ohmic upon annealing at 1000℃ for 2 min in a N_2 ambient. A nickel silicide phase (Ni_2Si) was formed during annealing, and smooth interfaces were observed when a Ti layer was present between the Ni and SiC. The dependence of ohmic contact resistance on Ni and Ti layer thickness was studied. Contacts with a 20 nm bottom Ti layer showed a contact resistance of 1 X 10~(-4) Ω cm~2, while maintaining an interfacial rms roughness of 7.5 nm. Contacts with thicker bottom Ti layers ( > 20 nm) were rectifying with a nonlinear current-voltage behavior even after annealing, and there was still a distinct Ti layer between the Ni and SiC. The lack of an ohmic contact was attributed to the Ti layer acting as a diffusion barrier restricting the formation of Ni_2Si. The Ni thickness was varied from 90 to 30 nm over a 20 nm Ti bottom layer, but the specific contact resistances (ρ_C) (3.3 X 10~(-4)±2.5 X 10~(-4)Ω cm~2) did not vary significantly with Ni thickness. Thicker Ni ( > 30 nm) contacts showed a nonuniform carbon distribution with graphite-rich zones at the silicide/SiC interface. Thin Ni contacts (30 nm) showed more uniform carbon distribution than in the contacts with thicker Ni, and no significant carbon-rich zone at the silicide/SiC interface.
机译：研究了掺杂到3.55 X 10〜（18）和1.22 X 10〜（19）cm〜（-3）的4H n-SiC氮的钛/镍/钛欧姆接触。沉积的Ti / Ni / Ti / SiC结构进行了整流，但在N_2环境中于1000℃退火2分钟后变为欧姆。在退火过程中形成硅化镍相（Ni_2Si），并且当在Ni和SiC之间存在Ti层时，观察到光滑的界面。研究了欧姆接触电阻对Ni和Ti层厚度的依赖性。底部Ti层为20 nm的触点的接触电阻为1 X 10〜（-4）Ωcm〜2，而界面均方根粗糙度保持在7.5 nm。甚至在退火后，具有较厚的底部Ti层（> 20 nm）的接触也会以非线性电流-电压行为进行整流，并且在Ni和SiC之间仍然存在明显的Ti层。缺乏欧姆接触是由于Ti层作为扩散阻挡层限制了Ni_2Si的形成。在20 nm的Ti底层上，Ni的厚度从90纳米变化到30纳米，但是比接触电阻（ρ_C）（3.3 X 10〜（-4）±2.5 X 10〜（-4）Ωcm〜2）镍厚度变化不大。较厚的Ni（> 30 nm）触点显示出不均匀的碳分布，在硅化物/ SiC界面处有富含石墨的区域。较薄的Ni触点（30 nm）显示出比较厚的Ni触点更均匀的碳分布，并且在硅化物/ SiC界面上没有明显的富碳区。

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