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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Control of sidewall slope in silicon vias using SF_6/O_2 plasma etching in a conventional reactive ion etching tool
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Control of sidewall slope in silicon vias using SF_6/O_2 plasma etching in a conventional reactive ion etching tool

机译：在常规反应离子刻蚀工具中使用SF_6 / O_2等离子刻蚀控制硅过孔的侧壁斜率

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摘要

The etching of anisotropic blind vias in silicon with diameters of 5-10 μm and an aspect ratio ～2-4 with controlled sidewall inclination is reported. The motivation for this work is the creation of a vertical, or three dimensional interconnect. Via formation by reactive ion etch (RIE) processing is the focus of this project. Arrays of vias have been etched in 125 mm diam silicon (100) wafers using a photoresist mask. A parallel plate RIE system with a SF_6/O_2 gas mixture is used. The effects of O_2/(SF_6+O_2) gas flow ratio, electrode bias, and chamber pressure on etch rate and feature profile have been studied. Visualization of the via profiles using scanning electron microscopy is used to identify the key parameters that control the sidewall slope. This slope is important for the subsequent deposition of via lining materials before filling with Cu. Our results indicate that the O_2/(SF_6+O_2) ratio is a key parameter in determining the sidewall slope, however the electrode bias and chamber pressure are critical in determining the physical and chemical process balance that determine the anisotropy of the etch process.
机译：报道了在直径为5-10μm，纵横比为2-4且具有可控侧壁倾角的硅中蚀刻各向异性盲孔的方法。进行这项工作的动机是创建垂直或三维互连。通过反应离子蚀刻（RIE）处理形成通孔是该项目的重点。使用光致抗蚀剂掩模在125毫米直径的硅（100）晶圆中蚀刻出过孔阵列。使用具有SF_6 / O_2气体混合物的平行板RIE系统。研究了O_2 /（SF_6 + O_2）气体流量比，电极偏压和腔室压力对刻蚀速率和特征轮廓的影响。使用扫描电子显微镜对通孔轮廓进行可视化，以识别控制侧壁斜率的关键参数。该斜率对于在填充铜之前随后沉积通孔衬里材料很重要。我们的结果表明，O_2 /（SF_6 + O_2）的比值是确定侧壁斜率的关键参数，但是电极偏压和腔室压力对于确定决定蚀刻工艺各向异性的物理和化学工艺平衡至关重要。

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