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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25 nm silicon nanoimprint templates
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Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25 nm silicon nanoimprint templates

机译：用于25 nm硅纳米压印模板的，经过HBr电感耦合等离子体蚀刻的Cr掩膜特征的轮廓演变

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In nanoimprint template fabrication, the profile of the template features plays a significant role in the profile, release properties, and CD of the imprinted features. We present a study of profile evolution of nanopatterned Si etching for the fabrication of Si nanoimprint templates using a thin Cr hard mask and an HBr inductively coupled plasma (ICP). In this work, we show the effects of chamber pressure, line spacing, mask selectivity, and mask shape on the bowing, notching, microtrenching, and etching rate of nanopatterned silicon for pressures in the range of 2-10 mTorr for line sizes between 20 and 100 nm (1∶1 line to space ratio). We observed that, for features with sizes below 50 nm, increasing pressure leads to positively sloped sidewalls and microtrenching. At lower pressures, lower etching rates are observed—together with poorer selectivity and mask faceting. Furthermore, we see a tendency for aspect ratio dependent etching (ARDE) or reactive ion etching (RIE) lag at low pressures. Unlike RIE reactors, dc bias in our ICP etcher decreases with decreasing pressure and constant electrode and ICP power. This suggests that neutral shadowing is the mechanism responsible for ARDE. Under constant power and temperature conditions, due to counterbalancing pressure effects between 2 and 10 mTorr, we obtain optimum imprint profiles at an intermediate pressure of 5 mTorr.
机译：在纳米压印模板的制造中，模板特征的轮廓在压印特征的轮廓，释放特性和CD中起着重要作用。我们目前对使用薄铬硬掩模和HBr电感耦合等离子体（ICP）制作Si纳米压印模板的纳米图案化Si蚀刻的轮廓演变的研究。在这项工作中，我们显示了腔压力，线间距，掩模选择性和掩模形状对20至10 mTorr压力范围内压力在2-10 mTorr范围内的纳米图案化硅的弯曲，开槽，微沟槽和蚀刻速率的影响。和100 nm（线距比为11：1）。我们观察到，对于尺寸小于50 nm的特征，压力增加会导致侧壁正倾斜和微沟槽。在较低的压力下，观察到较低的蚀刻速率-以及较差的选择性和掩膜刻面。此外，我们看到了在低压下依赖于纵横比的蚀刻（ARDE）或反应离子蚀刻（RIE）滞后的趋势。与RIE反应器不同，我们的ICP蚀刻机中的直流偏置会随着压力降低以及恒定的电极和ICP功率而降低。这表明中性阴影是造成ARDE的机制。在恒定的功率和温度条件下，由于2至10 mTorr之间的平衡压力效应，我们在5 mTorr的中间压力下可获得最佳的压印轮廓。

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