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首页> 外文会议>Symposium on Plasma Processing >Plasma-surface kinetics and feature profile evolution in Cl_2 + HBr etching of polysilicon
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Plasma-surface kinetics and feature profile evolution in Cl_2 + HBr etching of polysilicon

机译：Polysilicon的CL_2 + HBR蚀刻中的等离子体表面动力学和特征简介演进

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The etching of polysilicon by low energy Cl_2 + HBr plasma beam was studied, and the etching yield as a function of composition and ion incident angle was measured. The etching yield by HBr plasma beam is slightly lower than Cl_2 plasma beam. The angular dependence of etching yield by both Cl_2 and HBr beam strongly suggests the mechanism of ion induced chemical etching, with highest etching yield at normal incident angle. For Cl_2 beam, the etching yield almost keeps constant until the off-normal incident angle of ions increased to 45°, while for HBr beam, the etching yield starts dropping even with small off-normal angle. The etching yield by Cl_2 + HBr plasma at different composition exhibits similar trend as pure HBr. The effect of the angular dependent etching yield difference between Cl_2 and HBr on feature profile evolution, as identified with Monte Carlo simulation, might contribute to the more anisotropic etching in HBr plasma.
机译：通过低能量Cl_2 + HBR等离子体束进行蚀刻多晶硅，并测量作为组合物和离子入射角的函数的蚀刻产率。通过HBR等离子体束的蚀刻产量略低于CL_2等离子体束。 CL_2和HBR梁蚀刻产量的角度依赖性强烈地表明了离子诱导的化学蚀刻的机制，具有正常入射角的最高蚀刻产率。对于CL_2光束，蚀刻产率几乎保持恒定，直到离子的离法入射角增加到45°，而对于HBR梁，蚀刻产率即使具有小的离法角度小而掉落。在不同组合物中Cl_2 + HBR血浆的蚀刻产量表现出类似的趋势作为纯HBr。用蒙特卡罗模拟鉴定的Cl_2和HBR之间的角度依赖性蚀刻屈服差对特征轮廓展开的影响，可能有助于HBR等离子体中的更各向异性蚀刻。

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