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Being manner in order to etch polysilicon gate structure inside the mannered null plasma etching chamber which makes the manner in order to etch polysilicon gate structure inside the plasma etching chamber, and
Being manner in order to etch polysilicon gate structure inside the mannered null plasma etching chamber which makes the manner in order to etch polysilicon gate structure inside the plasma etching chamber, and
Topic SolutionsMethod in order to etch polysilicon gate structure inside the plasma etching chamber is offered. The method starts from the process which provides the pattern which protects the polysilicon film which is etched. Next, the plasma is ignited. Next, the polysilicon film which is not protected everything is almost etched. Next, the silicon content gas is introduced, while introducing the silicon content gas, remainder of the polysilicon film is etched. Furthermore, in order to introduce the silicon content gas during etching processing, also the etching chamber which is formed is offered.
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