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首页> 外文期刊>Plasma Sources Science & Technology >Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
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Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas

机译：在高密度等离子体中蚀刻多晶硅栅极期间的轮廓演变和纳米级线宽控制

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Plasma-surface interactions during etching of polysilicon gates in high-density HBr-based plasmas have been investigated by x-ray photoelectron spectroscopy and transmission electron microscopy. Significant deposition of etch by-products, SiBrxOy, presumably coming from reactor walls, was observed to occur on wafer surfaces at the beginning of the overetch in HBr/O-2 plasmas after the main etch of poly-Si. It was also found that this SiBrxOy, deposition results in sidewall tapering of poly-Si gates because of the virtually increased mask width; moreover, the amount of SiBrxOy deposited and thus the etch anisotropy strongly depends on the concentration of O-2 in HBr/O-2 plasmas. On the basis of these observations, an approach to achieve nanometre-scale linewidth control during etching of poly-Si gates is discussed. [References: 26]
机译：通过X射线光电子能谱和透射电子显微镜研究了高密度HBr基等离子体中多晶硅栅极蚀刻过程中的等离子体表面相互作用。在多晶硅的主要蚀刻之后，在HBr / O-2等离子体中，在过蚀刻开始时，观察到在晶片表面上发生了可能来自反应器壁的蚀刻副产物SiBrxOy的大量沉积。还发现，由于实际上增加了掩模宽度，这种SiBrxOy沉积导致了多晶硅栅的侧壁逐渐变细。此外，SiBrxOy的沉积量以及蚀刻各向异性在很大程度上取决于HBr / O-2等离子体中O-2的浓度。基于这些观察，讨论了一种在多晶硅栅刻蚀过程中实现纳米级线宽控制的方法。 [参考：26]

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