Investigations on the mechanism of silicon etching with chlorine-trifluoride

Arnim Hoechst; Frank Fischer; Gunter Kirbach; Andrea Urban; Volker Becker; Mathias Irmscher; Holger Sailer; Dieter P. Kern

首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Investigations on the mechanism of silicon etching with chlorine-trifluoride

【24h】

Investigations on the mechanism of silicon etching with chlorine-trifluoride

机译：三氟化氯腐蚀硅的机理研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigated chlorine trifluoride (ClF_3) etching of silicon with a patterned oxide mask layer prepared by e-beam lithography. The mask apertures varied from 0.1 μm to 300 μm. This enables to adjust the flow rate of ClF_3 molecules into the etched cavity leading to a strong variation of the ClF_3 abundance at the silicon surface. A crucial dependence of the etch rate on the aperture area was observed revealing a maximum of the etch rate for a specific ClF_3 abundance. A physical description of the etch process is developed in order to distinguish between different mechanisms within the etching process. At low ClF_3 abundance the etch rate is limited due to a lack of ClF_3. For high abundance the etch rate is assumed to be hampered by a diffusion like transport of ClF_3 molecules through a fluorosilyl layer formed on the silicon surface. It can be shown that the etch rate of silicon with ClF_3 is not limited by the chemical reaction at high ClF_3 abundance. Additionally, we observed a change in etching behavior from isotropic to anisotropic with a strong correlation to the etching regime.

机译：我们研究了通过电子束光刻制备的图案化氧化物掩模层对硅进行的三氟化氯（ClF_3）蚀刻。掩模孔径在0.1μm至300μm之间变化。这使得能够调节ClF_3分子进入蚀刻腔的流速，从而导致硅表面ClF_3丰度的强烈变化。观察到蚀刻速率对孔径面积的关键依赖性，揭示了对于特定的ClF_3丰度的蚀刻速率的最大值。开发了蚀刻工艺的物理描述，以区分蚀刻工艺中的不同机制。在低ClF_3丰度的情况下，由于缺少ClF_3，蚀刻速率受到限制。对于高丰度，假定蚀刻速率受到ClF_3分子通过形成在硅表面上的氟甲硅烷基层的传输之类的扩散的阻碍。可以看出，具有ClF_3的硅的蚀刻速率不受高ClF_3丰度下的化学反应的限制。此外，我们观察到蚀刻行为从各向同性变为各向异性的变化，与蚀刻方式有很强的相关性。

著录项

来源
《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2005年第5期|p.1936-1942|共7页
作者
Arnim Hoechst; Frank Fischer; Gunter Kirbach; Andrea Urban; Volker Becker; Mathias Irmscher; Holger Sailer; Dieter P. Kern;
展开▼
作者单位

Robert Bosch GmbH, Department Engineering Sensor Process Technology, Reutlingen, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism [J] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, ACS Omega . 2017,第8期

机译：金属辅助化学蚀刻工程硅和多孔硅和硅纳米线：AG尺寸和电子清除率对形态控制和机制的作用
2. Some Investigations on the Anisotropy of the Chemical Etching of(h?k?0)and(h?h?I)Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes [J] . C. R.Telliera, C.Hodebourg, T. G.Leblois Active and passive electronic components . 2003,第2期

机译：在35％的NaOH溶液中对（h？k？0）和（h？h？I）硅片的化学刻蚀的各向异性进行一些研究。第三部分：确定用于仿真器Tensosim的数据库和2D蚀刻形状的预测
3. SOME INVESTIGATIONS ON THE ANISOTROPY OF THE CHEMICAL ETCHING OF (hkO) AND (hhl) SILICON PLATES IN A NaOH 35% SOLUTION. PART III: DETERMINATION OF A DATABASE FOR THE SIMULATOR TENSOSIM AND PREDICTION OF 2D ETCHING SHAPES [J] . C. R. TELLIER, C. HODEBOURG, T. G. LEBLOIS Active and Passive Electronic Components . 2003,第2期

机译：在（35％）NaOH溶液中对（hkO）和（hhl）硅板化学腐蚀的各向异性的一些研究。第三部分：确定仿真器TensoSIM的数据库并预测2D蚀刻形状
4. Parameter Investigation of Nano-Sized Etching in an ICP Silicon Etching System [C] . Chen, S.C., Kuo, Emerging Technologies -Nanoelectronics, 2006 IEEE Conference on . 2006

机译：ICP硅刻蚀系统中纳米刻蚀的参数研究
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Engineering Silicon to Porous Silicon and SiliconNanowires by Metal-Assisted Chemical Etching: Role of Ag Size andElectron-Scavenging Rate on Morphology Control and Mechanism [O] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, 2017

机译：从硅工程到多孔硅和硅金属辅助化学刻蚀的纳米线：Ag的大小和作用电子清除率对形貌控制及机理的影响
7. Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism [O] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, 2017

机译：通过金属辅助化学蚀刻工程硅到多孔硅和硅纳米线：ag尺寸和电子清除率对形态控制和机理的影响

Investigations on the mechanism of silicon etching with chlorine-trifluoride

摘要

著录项

相似文献

相关主题

期刊订阅