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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition
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Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor deposition

机译：热收支对高密度等离子体化学气相沉积法制备的磷硅酸盐玻璃的影响

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摘要

High-density plasma chemical-vapor deposition phosphosilicate glass (PSG) films were evaluated for the application of premetal dielectric materials. The PSG films were deposited using phosphorous-related precursors reacted with silane and oxygen at a temperature ≤ 550℃. The as-deposited films were subsequently furnace annealed at 400℃ for 10 to 30 min to simulate the effect of thermal budget on premetal dielectric layers in the current integrated circuit scheme. In addition, the PSG films were also annealed by rapid thermal processing at 925℃ for 10 to 30 s, to examine film stability near the glass transformation temperature. Fourier transform infrared spectroscopy (FTIR), stress measurement, x-ray fluorescence analysis, and x-ray photoelectron spectroscopy (XPS) were used to characterize the PSG films. Film stress measurement was used to examine the stress hysteresis of the PSG films in the thermal-budget process. The results show that residual inactive phosphorous and compounds with P=O bonds are present in the as-deposited PSG films. Some residual phosphorous became active after the thermal annealing. The FTIR results that show an increase in the P=O group upon numerous annealing treatments is in agreement with the XPS analysis.
机译：对高密度等离子体化学气相沉积磷硅玻璃（PSG）膜进行了预金属介电材料应用的评估。 PSG膜是使用磷相关的前体在≤550℃的温度下与硅烷和氧气反应沉积的。随后将沉积的薄膜在400℃的温度下退火10至30分钟，以模拟当前集成电路方案中热收支对预金属介电层的影响。另外，还通过在925℃下快速热处理10到30 s对PSG膜进行退火，以检查其在玻璃化转变温度附近的稳定性。使用傅里叶变换红外光谱（FTIR），应力测量，X射线荧光分析和X射线光电子能谱（XPS）表征PSG膜。膜应力测量用于检查热预算过程中PSG膜的应力滞后。结果表明，在沉积的PSG膜中存在残留的惰性磷和具有P = O键的化合物。在热退火之后，一些残留的磷变得有活性。 FTIR结果表明，经过多次退火处理后P = O基团增加，这与XPS分析一致。

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