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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Selective epitaxial growth for plugs of high-density devices
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Selective epitaxial growth for plugs of high-density devices

机译：高密度器件插头的选择性外延生长

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Silicon-plugging process using selective epitaxial growth by low-pressure chemical vapor deposition is developed for 0.12 μm tech dynamic random access memory application, showing remarkable performance in electronic properties as well as in building structures. Process problems such as selectivity, local nonuniformity of growth rate, and facet generation can be well solved with the help of chemical vapor deposition thermodynamics and growth mechanism based on gas phase reactions. It is also proved that the thermal budget of the selective epitaxial growth (SEG) plug process has no significant influence on phosphorus outdiffusion from the ILD borophosphosilicate glass barrier to cell junction. Low contact resistance of the SEG plug, reaching about one third of that of conventional silicon plug, is attributed to the epitaxial interface between the plug and cell junction. Other good electronic properties such as I_(dsat) and junction leakage strongly suggest that the cell plug using selective epitaxial growth should be a breakthrough in future semiconductor manufacturing.
机译：针对0.12μm技术动态随机存取存储器应用开发了通过低压化学气相沉积使用选择性外延生长的硅塞工艺，该技术在电子性能以及建筑结构方面均表现出卓越的性能。借助化学气相沉积热力学和基于气相反应的生长机理，可以很好地解决诸如选择性，生长速率局部不均匀以及刻面生成等工艺问题。还证明了选择性外延生长（SEG）塞工艺的热收支对从ILD硼磷硅酸盐玻璃阻挡层到细胞结的磷扩散没有显着影响。 SEG插塞的低接触电阻达到了常规硅插塞的约三分之一，这归因于插塞与单元结之间的外延界面。其他良好的电子特性，例如I_（dsat）和结泄漏，强烈表明使用选择性外延生长的电池栓塞应该是未来半导体制造的突破。

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