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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure >Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures
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Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures

机译：在各种衬底温度下沉积的硅薄膜的结构和传输特性之间的相关性

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Intrinsic silicon thin films have been deposited with high and low dilution of hydrogen in silane by radio frequency powered plasma enhanced chemical vapor deposition method at varying substrate temperatures (200℃≤T_s≤370℃ ). Structural and transport properties of these films have been studied. With high hydrogen dilution, all the films are microcrystalline over the range of T_s investigated. The grain size (～300 A) does not change with T_s but the diffusion length of minority carriers decreases from 200 to 90 nm. With low hydrogen dilution a clear transition from amorphous to microcrystalline phase occurs with increase in T_s. The grain size increases from 88 to 350 A for the microcrystalline films along with an increase in diffusion length from 90 to 135 nm. The correlation between the structural and transport properties are discussed in terms of hydrogen incorporation in the films. We conclude that low T_s with high hydrogen dilution and high T_s with low hydrogen dilution are two possible combinations for deposition of device quality microcrystalline films.
机译：采用射频等离子体增强化学气相沉积法，在不同的衬底温度（200℃≤T_s≤370℃）下，用高低稀释度的氢在硅烷中沉积本征硅薄膜。已经研究了这些膜的结构和传输性能。在高氢稀释下，所有薄膜在所研究的Ts范围内均为微晶。晶粒尺寸（〜300 A）不随T_s变化，但少数载流子的扩散长度从200 nm减小至90 nm。在低氢稀释下，随着T_s的增加，会发生从无定形到微晶相的清晰过渡。对于微晶膜，晶粒尺寸从88增加到350 A，而扩散长度从90nm增加到135nm。根据膜中的氢掺入量讨论了结构和传输性能之间的相关性。我们得出的结论是，氢稀释度高的低T_s和氢稀释度低的高T_s是两种沉积器件质量微晶膜的可能组合。

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