Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality

Y. Koval; T. Borzenko; S. Dubonos

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Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality

机译：聚甲基丙烯酸甲酯用于通过离子束蚀刻进行图案转印的方法：提高蚀刻均匀性和图案质量

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We have studied the peculiar defects that appear on the surface of polymethylmethacrylate (PMMA) during ion beam etching. The quantity of defects and their type can be strongly influenced by a preparatory treatment before ion beam etching. Electron irradiation in a wide range of doses and a development procedure were used as the treatment. We have shown that high dose electron irradiation of PMMA structures before ion beam etching can noticeably improve pattern transfer. The improved homogeneity of the PMMA etching is the main reason for the effect. The obtained result is explained by a specific mechanism of ion beam etching of PMMA.

机译：我们已经研究了在离子束蚀刻过程中出现在聚甲基丙烯酸甲酯（PMMA）表面的特殊缺陷。缺陷的数量及其类型会受到离子束刻蚀之前的预处理的强烈影响。使用各种剂量的电子辐照和显影程序作为治疗方法。我们已经表明，在离子束蚀刻之前对PMMA结构进行大剂量电子辐照可以显着改善图案转移。改善PMMA蚀刻均匀性的主要原因是这种效果。通过对PMMA进行离子束蚀刻的具体机理来解释所获得的结果。

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《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure》 |2003年第5期|p.2217-2219|共3页
作者
Y. Koval; T. Borzenko; S. Dubonos;
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作者单位

Physikalisches Institut III der Universitat Erlangen-Nuernberg, Erwin-Rommel strasse 1, 91058 Erlangen, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality

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