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首页> 外文期刊>Journal of Vacuum Science & Technology >Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells
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Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells

机译：基于InGaN / GaN多量子阱的肖特基二极管氢传感器

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摘要

A Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells was fabricated. Its hydrogen-sensing properties (e.g., current–voltage characteristics, barrier-height variation, and response) and its hydrogen adsorption properties (e.g., hydrogen reaction kinetics, transient behavior, response time, and activation energy) were studied over a wide range of temperature or H2 concentration. Results showed that the device is sensitive to hydrogen ambient even at high temperature (response is 0.11 at 300 °C in 810 ppm H2). According to the kinetic adsorption analysis, the activation energy of the sensor is 4.9 kcal/mol. Moreover, the sensor could perform rapid hydrogen detection at high temperature (response time is 25.1 s at 400 °C in 800 ppm H2). Therefore, the sensor is a useful device for hydrogen-sensing applications, especially at high temperature.
机译：制备了基于InGaN / GaN多量子阱的肖特基二极管氢传感器。在宽范围的温度范围内研究了其氢感测特性（例如，电流-电压特性，势垒高度变化和响应）和氢吸附特性（例如，氢反应动力学，瞬态行为，响应时间和活化能）。温度或氢气浓度。结果表明，该设备即使在高温下也对氢气环境敏感（在810 ppm H2中，在300°C下的响应为0.11）。根据动力学吸附分析，传感器的活化能为4.9 kcal / mol。此外，该传感器可以在高温下（在400 ppm H2中在400°C下响应时间为25.1 s）执行快速氢气检测。因此，该传感器是用于氢感测应用的有用设备，尤其是在高温下。

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