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首页> 外文期刊>Journal of Vacuum Science & Technology >Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography
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Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography

机译：6.x nm极端紫外光刻的抗蚀剂灵敏度预测方法

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摘要

Potential extension of 13.5 nm extreme ultraviolet lithography (EUVL) to the soft x-ray region in the 6.x nm range (6.6–6.8 nm) has been discussed recently in academia and the semiconductor industry in terms of the light source, optics, and resist performance. In this study, the authors investigated the precise sensitivities of several resists (both nonchemically amplified and chemically amplified resists) using highly monochromatized soft x rays from synchrotron radiation with accurate dosimetry. The selected wavelengths included 6.7 nm, which is one of the candidates for 6.x nm EUVL. Each obtained “dose/sensitivity, E (mJ cm-2)” was converted into the “absorbed dose, D (absorbed energy per unit mass, Gray; Gy = J kg-1)” in terms of radiation and nuclear science. Although the absorbed dose in a resist film depends on the distance from the top surface of the resist, the required absorbed doses (D0 or D50) corresponding to the dose/sensitivities (E0 or E50) were almost constant for each resist, regardless of the exposure wavelength from 3.1 to 6.7 nm. This would be applicable in the EUV/soft x-ray region, where nearly the same chemical reactions are induced. According to the obtained results, the resist sensitivities for any exposure wavelength in the EUV/soft x-ray region can be predicted easily by using the sensitivity that is measured at a certain wavelength, the resist's thickness, and the linear absorption coefficients that can be calculated using the chemical composition and density of a resist. The resist sensitivity at 6.x nm can be predicted by evaluating the sensitivity using a conventional 13.5 nm EUV exposure tool. Moreover, this prediction method can be used for dose calibration of a simplified EUV exposure tool by utilizing a resist sensitivity that is obtained for a calibrated exposure sourc- .
机译：13.5 nm的极紫外光刻（EUVL）可能扩展到6.x nm范围（6.6–6.8 nm）的软X射线区域，最近在学术界和半导体行业就光源，光学，并抵抗表现。在这项研究中，作者使用来自同步加速器辐射的高单色软X射线和精确剂量法研究了几种抗蚀剂（非化学放大和化学放大的抗蚀剂）的精确灵敏度。选定的波长包括6.7 nm，这是6.x nm EUVL的候选波长之一。将每个获得的“剂量/敏感性E（mJ cm -2 ）”转换为“吸收剂量D（单位质量吸收能量，灰色； Gy = J kg -1 < / sup>）”，就辐射和核科学而言。尽管抗蚀剂膜中的吸收剂量取决于距抗蚀剂顶面的距离，但与每种抗蚀剂的剂量/灵敏度（E0或E50）相对应的所需吸收剂量（D0或D50）几乎恒定，无论曝光波长从3.1到6.7 nm。这将适用于诱发几乎相同的化学反应的EUV /软X射线区域。根据获得的结果，可以通过使用在特定波长下测得的灵敏度，抗蚀剂的厚度以及可以得出的线性吸收系数，轻松地预测EUV /软X射线区域中任何曝光波长的抗蚀剂灵敏度。使用抗蚀剂的化学成分和密度计算得出。可以通过使用常规13.5 nm EUV曝光工具评估灵敏度来预测6.x nm处的抗蚀剂灵敏度。而且，该预测方法可通过利用针对校准曝光源获得的抗蚀剂灵敏度来用于简化EUV曝光工具的剂量校准。

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