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首页> 外文期刊>Journal of Vacuum Science & Technology >Boron nitride growth on metal foil using solid sources
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Boron nitride growth on metal foil using solid sources

机译：使用固体源在金属箔上生长氮化硼

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摘要

Large-area, atomically thin hexagonal boron nitride (h-BN) thin films were grown simply by annealing in a vacuum from solid sources deposited on Ni or Co foils. Either a sputter-deposited amorphous boron nitride film or a spin-coated borane ammonia film can be used as the B and N source. The h-BN films were formed on the back surface of the metal foil following diffusion of B and N atoms through the foil of ∼20 μm-thick, although N is almost completely insoluble in these metals. The atomically thin h-BN film largely prevented the foil from oxidizing. The h-BN film formation was found to be restricted by the provision of N atoms. The authors propose that the mass transport of N atoms in the foil and on the back surface of the foil is dominated by grain boundary diffusion and surface migration.
机译：大面积，原子薄的六方氮化硼（h-BN）薄膜是通过在Ni或Co箔上沉积的固态源通过真空退火简单地生长的。溅射沉积的非晶氮化硼膜或旋涂硼烷氨膜都可以用作B和N源。在B和N原子通过厚度约20μm的金属箔扩散后，在金属箔的背面形成了h-BN膜，尽管N几乎完全不溶于这些金属。原子薄的h-BN膜在很大程度上防止了箔的氧化。发现h-BN膜的形成受到N原子的提供的限制。作者提出，箔中以及箔背面上N原子的质量传递主要受晶界扩散和表面迁移的影响。

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