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首页> 外文期刊>Journal of Vacuum Science & Technology >Focused ion beam induced Ga-contamination—An obstacle for UV-nanoimprint stamp repair?
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Focused ion beam induced Ga-contamination—An obstacle for UV-nanoimprint stamp repair?

机译：聚焦离子束引起的Ga污染-UV纳米压印印章修复的障碍？

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摘要

Ultravoilet (UV)-nanoimprint lithography (NIL) master stamps are subject to wear due to the mechanical nature of the imprint process. To extend the useful lifespan of expensive NIL master stamps, a focused ion beam repair process is highly desirable. Due to the inevitable Ga-staining induced by the focused ion beam processing the transmissivity of repaired NIL stamps is locally degraded. In this work, the authors investigate the impact of Ga-induced transmission losses on the imprint process. Experimental results indicate that the reduced transparency mainly impacts the amplitude of bow deformations in the imprint. These deformations are strongly enhanced by Ga-staining of the master stamp. The authors present a method for quantification of such bow-deformations. The introduced bowing-factor allows to make a qualified decision on whether the occurring deformation is acceptable for the target application. The authors have achieved control over the extent of the Ga-induced bow-deformation by tuning the UV-dose applied during NIL resist exposure. The bowing-factor provides excellent guidance for adapting the required exposure-dose of the NIL resist to reduce the bow-deformation to an acceptable level. With the presented approach, the mitigation of Ga-staining induced defects in the imprint is successfully achieved.
机译：由于压印过程的机械性质，紫外线（UV）-纳米压印光刻（NIL）主印章会磨损。为了延长昂贵的NIL母模的使用寿命，非常需要聚焦离子束修复工艺。由于聚焦离子束处理引起的不可避免的Ga染色，修复后的NIL压模的透射率会局部降低。在这项工作中，作者研究了Ga引起的传输损耗对压印过程的影响。实验结果表明，透明度降低主要影响压印中弓形变形的幅度。通过对主图章进行Ga染色，可以大大增强这些变形。作者提出了一种量化这种弓形变形的方法。引入的弯曲系数可以就目标应用程序所发生的变形是否可接受做出合格的决定。作者已经通过调整在NIL抗蚀剂曝光期间施加的UV剂量来控制Ga引起的弓形变形的程度。弯曲因子为调整所需的NIL抗蚀剂曝光剂量提供了极好的指导，可将弯曲变形降低到可接受的水平。利用所提出的方法，成功地减轻了压印中Ga染色引起的缺陷。

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