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首页> 外文期刊>Journal of Vacuum Science & Technology >Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method
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Analysis of charging effects on highly resistive materials under electron irradiation by using transient-absorbed-current method

机译：瞬态吸收电流法分析电子辐照下高阻材料的充电效应

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摘要

Accumulation and relaxation properties of charge in highly resistive materials under electron irradiation were investigated by using an absorption current stimulated by sequential two-pulse electron beams. The amount of absorbed charge corresponding to induced surface charge was obtained from the time integration of the absorption component of the substrate current. The absorbed charge of both highly resistive poly-Si (10~9—10~(10) Ω cm) and SiO_2 substrates increases to 35 nC/cm~2 with increasing injected charge and saturates; in contrast, there is a significant difference in absorbed charges for the two substrates at low injected charge (i.e., less than 1 μC/cm~2). The time constant of absorbed-charge relaxation is obtained from the analysis of sequential absorbed current, namely, 0.4 ms for poly-Si and 12.5 ms for SiO_2. A distinct voltage-contrast image of poly-Si plugs buried in a SiO_2 film was successfully obtained by scanning electron microscopy with charging control in accordance with the difference in the charging characteristics of poly-Si and SiO_2.
机译：通过使用连续两脉冲电子束激发的吸收电流，研究了高电阻材料在电子辐照下电荷的积累和弛豫特性。从基板电流的吸收分量的时间积分中获得与感应的表面电荷相对应的吸收电荷的量。高电阻多晶硅（10〜9-10〜（10）Ωcm）和SiO_2衬底的吸收电荷随着注入电荷的增加而增加到35 nC / cm〜2并达到饱和。相反，在低注入电荷（即，小于1μC/ cm〜2）下，两个基板的吸收电荷存在显着差异。吸收电荷弛豫的时间常数是从连续吸收电流的分析得出的，即多晶硅的0.4 ms和SiO_2的12.5 ms。根据多晶硅和SiO_2的充电特性差异，通过带电荷控制的扫描电子显微镜成功地获得了埋在SiO_2膜中的多晶硅插塞的清晰的电压对比图像。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.031209.1-031209.6|共6页
  • 作者

    Natsuki Tsuno; Yusuke Ominami; Hiroya Ohta; Hiroyuki Shinada; Hiroshi Makino; Yoshinobu Kimura;

  • 作者单位

    Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;

    Hitachi High-Technologies Corporation, Nanotechnology Products Business Group, 882, Ichige,Hitachinaka, lbaraki 312-8504, Japan;

    Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;

    Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;

    Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;

    Hitachi Ltd., Central Research Laboratory, 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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