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Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy

机译:通过分子束外延在GaAs(n11)衬底上嵌入ErAs纳米棒

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摘要

This article investigates the codeposited growth of ErAs and GaAs at concentrations of 6% and 10% of Er on (lll)A, (211)A, (311)A, and (511)AGaAs. On (lll)A, (211)A, and (311)AGaAs, ErAs nanorods were observed. Those observed on the (111)A GaAs surface were found to align themselves normal to the substrate, along the [111] direction, whereas those on the (211)A and (311)A GaAs substrates were found to align along the [211] direction, as was previously observed on (411)A GaAs. All observed nanorods had a diameter of approximately 2 nm and a period of 5-6 nm. Codeposited growth on (511)A GaAs produced ErAs nanoparticles that were elliptical in shape and aligned along the (311) planes with their major axis pointing along the [311] direction. Growth of these nanorods and nanoparticles most likely occurs by a surface phase-separation mechanism.
机译:本文研究了(III)A,(211)A,(311)A和(511)AGaAs上Er浓度为6%和10%时ErAs和GaAs的共沉积生长。在(III)A,(211)A和(311)AGaAs上,观察到ErAs纳米棒。发现在(111)A GaAs表面上观察到的那些沿着[111]方向垂直于基板对齐,而在(211)A和(311)A GaAs衬底上观察到的那些沿着[211]对齐。方向,如先前在(411)A GaAs上观察到的那样。所有观察到的纳米棒的直径约为2nm,周期为5-6nm。在(511)A GaAs上共沉积生长产生的ErAs纳米颗粒呈椭圆形,并沿(311)平面排列,其长轴指向[311]方向。这些纳米棒和纳米颗粒的生长最有可能通过表面相分离机制发生。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C108.1-03C108.4|共4页
  • 作者单位

    Materials Department, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106 and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;

    Materials Department, University of California, Santa Barbara, California 93106 and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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