...
机译:通过分子束外延在GaAs(n11)衬底上嵌入ErAs纳米棒
Materials Department, University of California, Santa Barbara, California 93106;
Materials Department, University of California, Santa Barbara, California 93106 and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
Materials Department, University of California, Santa Barbara, California 93106 and Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106;
机译:通过分子束外延在(n11)A GaAs衬底上生长的In_0.18Ga_0.82As / GaAs_1-xP_y量子阱
机译:通过分子束外延在(4 1 1)A和(4 1 1)B GaAs上生长嵌入的ErAs纳米棒
机译:分子束外延中束致横向外延在(001)GaAs衬底上的生长机理
机译:基质温度依赖性在A(411)的GaAsp的分子束外延期间作为原子的表面迁移为GaAs衬底
机译:通过分子束外延生长的GaAs / Gaassb(N)核心壳纳米线的带隙调谐
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:通过分子束外延生长的GaAs1-Xbix / GaAs量子阱结构的光学性质(100)和(311)B GaAs基材
机译:通过分子束外延在Gaas衬底上的Inalas缓冲层上生长的InGaas / alGaas子带间跃迁结构