Polarity controlled lnAs{111} films grown on Si(111)

Akihiro Ohtake; Kazutaka Mitsuishi

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Polarity controlled lnAs{111} films grown on Si(111)

机译：在Si（111）上生长的极性可控lnAs {111}薄膜

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InAs heteroepitaxy on Si(111) has been studied using scanning tunneling microscopy and high-angle annular dark-field scanning transmission electron microscopy. The growth mode and polarity of the InAsjlll} films drastically change, depending on the pregrowth treatment of Si(111) surfaces. High-quality (111)A-oriented InAs films are two-dimensionally grown on the In-terminated Si(111)-(4 X 1) surface, while large three-dimensional InAs islands were formed on the Si(lll)-(7×7) and Si(lll)-(1 X 1)-As surfaces. Two-dimensional InAs(lll)B islands were obtained by supplying an As molecular beam on the In crystals formed on the As-terminated Si(111)-(1 ×1) surface. The authors also performed growth experiments of GaAs and In_(0.5)Ga_(0.5)As on In-terminated Si(111) and found that the two-dimensional growth is more promoted as the In content (i.e., lattice mismatch) is increased.

机译：使用扫描隧道显微镜和高角度环形暗场扫描透射电子显微镜研究了Si（111）上的InAs异质外延。取决于Si（111）表面的预生长处理，InAsjll}薄膜的生长模式和极性会发生巨大变化。在In-端接的Si（111）-（4 X 1）表面上二维生长高质量（111）A取向的InAs薄膜，而在Si（III）-（上形成大尺寸的三维InAs岛。 7×7）和Si（III）-（1 X 1）-As表面。通过在形成于As末端的Si（111）-（1×1）表面上形成的In晶体上提供As分子束，可以获得二维InAs（III）B岛。作者还进行了InAs端基Si（111）上GaAs和In_（0.5）Ga_（0.5）As的生长实验，发现随着In含量（即晶格失配）的增加，二维生长得到了更大的促进。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.031804.1-031804.4|共4页
作者
Akihiro Ohtake; Kazutaka Mitsuishi;
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作者单位

National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan;

National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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机译：控制Si（111）表面上分子束外延生长的In-Bi原子膜的极性
2. Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface [J] . Cho-Ying Lin, Chia-Hsiu Hsu, Yu-Zhang Huang, Scientific reports. . 2019,第1期

机译：控制Si（111）表面上分子束外延生长的In-Bi原子膜的极性
3. AFM observation of epitaxially grown (111)HfN film and (111)Cu/(111)HfN bilayered film on (111)Si [J] . Satoko Shinkai, Katsutaka Sasaki 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2001,第244期

机译：在（111）Si上外延生长（111）HfN薄膜和（111）Cu /（111）HfN双层薄膜的AFM观察
4. V/III Ratio Dependence of Polarity of GaN Grown on GaAs (111)A-Ga and (111)B-As Surfaces by MOMBE [C] . O. TAKAHASHI, T. NAKAYAMA, R. SOUDA, Fourth International Conference on Nitride Semiconductors . 2002

机译：通过MOMBE在GaAs（111）A-Ga和（111）B-As表面上生长的GaN极性的V / III比依赖性
5. 使用射頻電漿輔助化學束磊晶成長氮化銦磊晶材料於表面氮化處理矽(111)基板之研究 =Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE [D] . Chen, Sheng. 2019

机译：使用射频电浆辅助化学束磊晶成长氮化铟磊晶材料于表面氮化处理矽(111)基板之研究 =Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE
6. Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface [O] . Cho-Ying Lin, Chia-Hsiu Hsu, Yu-Zhang Huang, -1

机译：控制Si（111）表面上分子束外延生长的In-Bi原子膜的极性
7. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111) [O] . Stanley, M.K. 1998

机译：在si（111）上生长的邻近si（111）表面和ag薄膜的RHEED研究
8. RHEED studies of vicinal Si(111) surfaces and Ag films grown on Si(111) [R] . Stanley, M. K. 1998

机译：在si（111）上生长的邻近si（111）表面和ag薄膜的RHEED研究

Polarity controlled lnAs{111} films grown on Si(111)

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