...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology >Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells
【24h】

Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells

机译：分子束外延生长InGaAsSbN / GaSb单量子阱的研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

InGaAsSbN quantum wells (QWs) have been investigated for potential light-emitting devices in the midinfrared region. This paper presents the growth and properties of molecular beam epitaxially grown InGaAsSbN single QWs using a variety of characterization techniques. A 10 K photoluminescence emission at 2.27 /mm, with a lowest full width at half maxima of 5 meV which shifted to 2.30 fim on in situ annealing, has been observed. The presence of well resolved Pendellosung fringes in high resolution x-ray diffraction and sharp abrupt interfaces in the corresponding transmission electron microscope (TEM) images are indications of the high quality of these QWs. Raman spectroscopy studies reveal the presence of well resolved Raman peaks with higher intensity, along with the presence of sharp second order modes of GaSb, further attesting to the high quality of the QW structures grown. Investigation of the annealed samples using Z-contrast scanning TEM images reveals atomic interdiffusion between the QW and surrounding GaSb layers, increasing the effective thickness of the QW, which explains the redshift upon annealing.
机译：已对InGaAsSbN量子阱（QW）进行了研究，以用于中红外区域中的潜在发光器件。本文介绍了使用各种表征技术外延生长的分子束InGaAsSbN单量子阱的生长和特性。已经观察到在2.27 / mm处有10 K的光致发光发射，其最小半峰全宽最低为5 meV，在原位退火时转变为2.30 fim。高分辨率X射线衍射中分辨良好的Pendellosung条纹的存在以及相应的透射电子显微镜（TEM）图像中存在尖锐的突变界面，表明这些QW的质量很高。拉曼光谱研究表明，存在强度较高的分辨良好的拉曼峰，以及清晰的二阶GaSb模式，进一步证明了所生长的QW结构的高质量。使用Z对比扫描TEM图像对退火样品进行的研究表明，量子阱与周围的GaSb层之间存在原子互扩散，从而增加了量子阱的有效厚度，这解释了退火时的红移。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C112.1-03C112.6|共6页
  • 作者

    Sudhakar Bharatan; Shanthi Iyer; Jia Li; Thomas A. Rawdanowicz; Lewis Reynolds Jr;

  • 作者单位

    Department of Electrical and Computer Engineering, North Carolina A&T State University Greensboro North Carolina 27411;

    Department of Electrical and Computer Engineering, North Carolina A&T State University Greensboro North Carolina 27411;

    Department of Electrical and Computer Engineering, North Carolina A&T State University Greensboro North Carolina 27411;

    Department of Materials Science and Engineering, North Carolina State University Raleigh North Carolina 27695;

    Department of Materials Science and Engineering, North Carolina State University Raleigh North Carolina 27695;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号