Atomic-scale modeling of In_xGa_(1-x)N quantum dot self-assembly

Zhenli Zhang; Alok Chatterjee; Christoph Grein; Anthony J. Ciani; Peter W. Chung

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Atomic-scale modeling of In_xGa_(1-x)N quantum dot self-assembly

机译：In_xGa_（1-x）N量子点自组装的原子尺度建模

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The authors simulate in three dimensions the molecular beam epitaxial growth of In_xGa_(1-x)N with classical molecular dynamics. Atomic interactions are simulated with Stillinger-Weber potentials. Both homoepitaxial and heteroepitaxial growths are studied. The effects of substrate temperature and indium concentration on quantum dot morphology, concentration profiles, and the thickness of wetting layers qualitatively agree with experimental findings. The authors' simulations support earlier suggestions that quantum dot formation in the InGaN/GaN system is governed by a stress-driven phase separation mechanism.

机译：作者在三个维度上模拟了具有经典分子动力学的In_xGa_（1-x）N分子束外延生长。原子相互作用用Stillinger-Weber势进行模拟。研究了同质外延生长和异质外延生长。衬底温度和铟浓度对量子点形貌，浓度分布和润湿层厚度的影响在质量上与实验结果一致。作者的仿真支持较早的建议，即InGaN / GaN系统中的量子点形成受应力驱动的相分离机制支配。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C133.1-03C133.7|共7页
作者
Zhenli Zhang; Alok Chatterjee; Christoph Grein; Anthony J. Ciani; Peter W. Chung;
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作者单位

Sivananthan Laboratories, Inc., Bolingbrook, Illinois 60440;

Sivananthan Laboratories, Inc., Bolingbrook, Illinois 60440;

Sivananthan Laboratories, Inc., Bolingbrook, Illinois 60440;

U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005;

U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Atomic-scale modeling of In_xGa_(1-x)N quantum dot self-assembly

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