Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn_(1-x)Cd_xSe quantum wells

I. Hernandez-Calder6n; M. Garcfa-Vazquez; L. M. Hernandez-Ramfrez; M. A. Vidal

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Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn_(1-x)Cd_xSe quantum wells

机译：逐层生长的Zn_（1-x）Cd_xSe量子阱的光致发光和二次离子质谱研究

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Quantum wells of Zn_(1-x)Cd_xSe can be grown in a layer-by-layer mode by submonolayer pulsed beam epitaxy (SPBE). The authors present the results of the characterization of a sample containing three quantum wells with different Cd contents produced without interrupting the growth process or changing the effusion cell temperatures. The quantum wells exhibit intense and narrow excitonic emission. Information about their structure and composition was obtained by means of low temperature photoluminescence and secondary ion mass spectrometry. A very good agreement was observed between both techniques, demonstrating that SPBE offers a great control of quantum well thickness and composition.

机译：Zn_（1-x）Cd_xSe的量子阱可以通过亚单层脉冲束外延（SPBE）逐层生长。作者介绍了表征样品的结果，该样品包含三个产生的具有不同Cd含量的量子阱，而不会中断生长过程或改变渗出池温度。量子阱表现出强烈和窄的激子发射。关于它们的结构和组成的信息是通过低温光致发光和二次离子质谱法获得的。两种技术之间都观察到非常好的一致性，表明SPBE可以很好地控制量子阱的厚度和组成。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.03C137.1-03C137.3|共3页
作者
I. Hernandez-Calder6n; M. Garcfa-Vazquez; L. M. Hernandez-Ramfrez; M. A. Vidal;
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作者单位

Physics Department, Cinvestav-IPN, Ave. IPN 2508, 07360 Mexico Distrito Federal, Mexico;

ECFM-Universidad Michoacana de San Nicolas de Hidalgo, Fco. J. Mugica s, 58060 Morelia,Michoacdn, Mexico;

ECFM-Universidad Michoacana de San Nicolas de Hidalgo, Fco. J. Mugica s, 58060 Morelia,Michoacdn, Mexico;

IICOS-Universidad Autdnoma de San Luis Potosi, Av. Karakorum 1470, Lomas 4", 78210 San Luis Potosi,San Luis Potosi, Mexico;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Photoluminescence and secondary ion mass spectrometry study of layer-by-layer grown Zn_(1-x)Cd_xSe quantum wells

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