Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching

Tomohiko Sugiyama; Iwao Ohwada; Tsutomu Nanataki; Yukihisa Moriguchi; Osamu Eryu; Masaya Ichimura; Manabu Gomi

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Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching

机译：通过化学刻蚀形成具有三维发射点的PMN-PZT铁电电子发射体的特性

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(Received 19 October 2010; accepted 30 April 2011; published 26 May 2011) Pb(Mg_(1/3)N_(2/3))O_3-PbZrO_3-PbTiO_3 (PMN-PZT) ferroelectric electron emitters with a novel electrode structures were formed by photolithography and chemical etching to investigate their electron emission characteristics. For the electron emitter formed with the most suitable etching time, the electron emission density was 17 nC/cm2. An electric potential distribution was simulated to clarify the effects of the vacuum gap, and results confirmed that the vacuum gap produces an electric field that leads electrons from the ferroelectric surface to the surrounding space.

机译：（2010年10月19日接收; 2011年4月30日接受; 2011年5月26日发布）具有新颖电极结构的Pb（Mg_（1/3）N_（2/3））O_3-PbZrO_3-PbTiO_3（PMN-PZT）铁电电子发射极是通过光刻和化学蚀刻形成的电子束以研究其电子发射特性。对于以最合适的蚀刻时间形成的电子发射器，电子发射密度为17 nC / cm2。模拟电势分布以阐明真空间隙的影响，结果证实真空间隙会产生电场，该电场将电子从铁电表面引导到周围空间。

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来源
《Journal of Vacuum Science & Technology》 |2011年第3期|p.032210.1-032210.4|共4页
作者
Tomohiko Sugiyama; Iwao Ohwada; Tsutomu Nanataki; Yukihisa Moriguchi; Osamu Eryu; Masaya Ichimura; Manabu Gomi;
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作者单位

Corporate R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan;

Corporate R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan;

Corporate R&D, NGK Insulators, Ltd., Nagoya 467-8530, Japan;

Nagoya Institute of Technology, Nagoya 466-8555, Japan;

Nagoya Institute of Technology, Nagoya 466-8555, Japan;

Nagoya Institute of Technology, Nagoya 466-8555, Japan;

Nagoya Institute of Technology, Nagoya 466-8555, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching

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