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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

机译：中子辐照对InGaN / GaN发光二极管电学和光学性能的影响

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摘要

InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5×1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
机译：发射波长为450 nm的InGaN / GaN多量子阱发光二极管（LED）的平均能量为9.8 MeV，剂量为5.5×1011 cm-2中子。辐照后，由于中子引起的晶格位移而形成了深能级，因此辐照的LED的正向电流减小了。但是，在辐照后第6天，在室温下消除了与入射中子碰撞引起的不稳定晶格损伤。通过室温下的自退火处理将二极管的导通电压，理想因子和光发射强度恢复到预辐射状态。

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