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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules
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Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules

机译：先进的原位硅化镍前硅（Siconi）在65 nm处清洁，以解决NiSix模块中的缺陷

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摘要

The existing Ar plasma sputter cleaning and dilute HF dip wet cleaning techniques have drawbacks, including critical dimension change, plasma damage, poor selectivity to oxides, vacuum breakage (causing oxide formation), and queue-time control. Siconi cleaning, a newly developed cleaning process for pre-Ni silicide cleaning at 65 nm, enables superior cleaning performance, including (1) selective removal of native oxide to minimize loss of Si and Ni, (2) elimination of spikes and reduction of pipe defects at the NiSi/Si interface, and (3) elimination of the queue-time dependency for improved productivity and simplification of fabrication. In this study, the chemical mechanism, hardware configuration, and Siconi integration results are described. The formation mechanisms for both spike and pipe defects are discussed, and practical solutions to these problems are addressed in detail. A significant reduction in junction leakage current, by three orders of magnitude, was observed. In addition, the pipe defect at the wafer edge is described and discussed.
机译：现有的Ar等离子溅射清洗和稀释的HF浸渍湿法清洗技术都有缺点，包括临界尺寸变化，等离子损坏，对氧化物的选择性差，真空破裂（导致形成氧化物）和排队时间控制。 Siconi清洗是一种新开发的清洗工艺，用于在65 nm处进行镍硅化物前清洗，具有出色的清洗性能，其中包括（1）选择性去除天然氧化物，以最大程度地减少Si和Ni的损失，（2）消除尖峰并减少管道NiSi / Si界面缺陷；以及（3）消除了排队时间依赖性，从而提高了生产率并简化了制造。在这项研究中，描述了化学机理，硬件配置和Siconi集成结果。讨论了尖峰和管道缺陷的形成机理，并详细讨论了解决这些问题的实际方法。观察到结漏电流显着降低了三个数量级。另外，描述和讨论了晶片边缘处的管道缺陷。

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