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机译:SiO_2膜上的Si_3N_4膜的超高选择性刻蚀,用于氮化硅栅隔离层刻蚀
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea and Research and Development Division, Hynix Semiconductor, Inc., San 136-1 Ami-ri, Bubal-eub, Icheon-si, Gyenghgi-do 467-701, Korea;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea;
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea;
机译:SiO2膜上的Si3N4膜的超高选择性刻蚀,用于氮化硅栅隔离层刻蚀
机译:使用CF_3I / O_2 / H_2中性束对栅侧壁隔离层进行高选择性氮化硅刻蚀,以刻蚀出Si和SiO_2
机译:GaAs金属绝缘体半导体场效应晶体管,采用Al层作为抗蚀膜的新工艺形成的Ox氮化栅膜,用于选择性刻蚀,Ox氮化和剥离。
机译:使用3D-NAND器件应用的无等离子体干法在SiO_2上超高选择性刻蚀Si_3N_4
机译:用于嵌入式纳米磁器件制造的氮化硅薄膜的纳米级反应离子刻蚀
机译:使用两步金属辅助化学刻蚀方法由冶金级硅粉形成硅纳米线填充膜
机译:双离子束沉积的无氢氮化硅膜的机械和蚀刻性能
机译:用于器件应用的III族氮化物薄膜的高密度等离子体蚀刻