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首页> 外文期刊>Journal of Vacuum Science & Technology >Interaction of NiSi with dopants for metallic source/drain applications
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Interaction of NiSi with dopants for metallic source/drain applications

机译：NiSi与掺杂剂的相互作用，用于金属源极/漏极应用

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摘要

This work has a focus on NiSi as a possible metallic contact for aggressively scaled complementary metal oxide semiconductor devices. As the bulk work function of NiSi lies close to the middle of Si bandgap, the Schottky barrier height (SBH) of NiSi is rather large for both electron (～0.65 eV) and hole (～0.45 eV). Different approaches have therefore been intensively investigated in the literature aiming at reducing the effective SBH: dopant segregation (DS), surface passivation (SP), and alloying, in order to improve the carrier injection into the conduction channel of a field-effect transistor. The present work explores DS using B and As for the NiSi/Si contact system. The effects of C and N implantation into Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1 -0.2 eV for both conduction polarities. A combined use of DS or SP with alloying could be considered for more effective control of effective SBH, but an examination of undesired compound formation and its probable consequences is necessary. Furthermore, an analysis of the metal silicides that have a small "intrinsic" SBH reveals that only a very small number of them are of practical interest as most of the silicides require either a high formation temperature or possess a high specific resistivity.
机译：这项工作着眼于NiSi作为可能用于大规模缩放的互补金属氧化物半导体器件的金属触点。由于NiSi的体功函数接近Si带隙的中部，因此对于电子（〜0.65 eV）和空穴（〜0.45 eV）而言，NiSi的肖特基势垒高度（SBH）都很大。因此，为了减少有效的SBH：掺杂剂偏析（DS），表面钝化（SP）和合金化，已在文献中进行了深入研究，以改善载流子注入场效应晶体管的导通通道的能力。本工作探讨了使用B和As的DS来形成NiSi / Si接触系统。研究了在形成NiSi之前将C和N注入到Si衬底中的影响，发现C的存在在将两种导电极性的有效SBH降低到0.1 -0.2 eV方面产生了积极的作用。可以考虑将DS或SP与合金结合使用，以更有效地控制有效的SBH，但必须检查不希望的化合物形成及其可能的后果。此外，对具有小的“本征” SBH的金属硅化物的分析表明，只有极少数的金属硅化物具有实际意义，因为大多数硅化物需要较高的形成温度或具有较高的电阻率。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第1期|p.C1I1-C1I11|共11页
  • 作者

    Jun Luo; Zhi-Jun Qiu; Zhen Zhang; Mikael OEstling; Shi-Li Zhang;

  • 作者单位

    State Key Laboratory of ASIC and Systems, Fudan University, 200433 Shanghai, China and School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden;

    State Key Laboratory of ASIC and Systems, Fudan University, 200433 Shanghai, China;

    School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598;

    School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden;

    State Key Laboratory of ASIC and Systems, Fudan University, 200433 Shanghai, China and School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden Solid-State Electronics, The Angstrom Laboratory, Uppsala University, Box 534, SE-75121 Uppsala, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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