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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers
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Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers

机译：具有SiOx钝化层的非晶InGaZnO4薄膜晶体管的偏置稳定性的改善

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The authors investigated the effect of SiOx passivation layers on the bias stability of bottom gate amorphous (α-) InGaZnO4 thin film transistors (TFTs) fabricated on glass substrates. The use of rapid thermal annealing for unpassivated TFTs in air improved the device performance, showing larger drain current and field effect mobility compared to the as-fabricated TFTs. Threshold voltage (VTH) and subthreshold gate-voltage swing (S) for both unpassivated and passivated devices were found to be nearly independent of the low-gate-voltage stress (5 V), but both were strongly affected under a relatively high-voltage stress (≫10 V). The positive VTH and S shifts after constant gate voltage stress (+20 V) of 1000 s were 1.8 V and 0.72 V decade-1 for the unpassivated devices and 1 V and 0.42 V decade-1 for the passivated devices, respectively. These results demonstrate that the SiOx passivation layer significantly reduced the shift in TFT’s characteristics.
机译：作者研究了SiOx钝化层对在玻璃基板上制造的底栅非晶（α-）InGaZnO4薄膜晶体管（TFT）的偏压稳定性的影响。对空气中未钝化的TFT进行快速热退火可改善器件性能，与制成的TFT相比，显示出更大的漏极电流和场效应迁移率。发现未钝化和钝化器件的阈值电压（VTH）和亚阈值栅极电压摆幅（S）几乎与低栅极电压应力（5 V）无关，但是在相对较高的电压下它们都受到强烈影响应力（≫10 V）。在1000 s的恒定栅极电压应力（+20 V）之后，未钝化器件的正VTH和S偏移分别为1.8 V和0.72 V十进制-1，对于钝化器件分别为1 V和0.42 V十进制-1。这些结果表明，SiOx钝化层大大降低了TFT特性的偏移。

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