Improvement of Ohmic contacts to In_(0.65)Ga_(0.35)Sb using Mo refractory metal and surface preparation for 6.3 A heterojunction bipolar transistors

E. Mairiaux; L. Desplanque; X. Wallart; M. Zaknoune

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Improvement of Ohmic contacts to In_(0.65)Ga_(0.35)Sb using Mo refractory metal and surface preparation for 6.3 A heterojunction bipolar transistors

机译：使用Mo难熔金属改善In_（0.65）Ga_（0.35）Sb的欧姆接触并为6.3 A异质结双极晶体管进行表面处理

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This article describes a comparative study of Ti/Au, Ti/Pd/Au, Ti/Pt/Au, Mo/Au, Mo/Pt/Au, and Pd/Mo/Pt/Au Ohmic contacts to both n- and p-In_(0.65)Ga_(0.35)Sb. For In_(0.65)Ga_(0.35)Sb:Te doped to 2 × 10~(18) cm~(-3), specific contact resistivities p_c below 2 × 10~(-6) Ω cm~2 were demonstrated. Lower p_c in the 10~(-7) Ω cm~2 range were also achieved for In_(0.65)Ga_(0.35)Sb:C doped to 4.5 × 10~(19) cm~(-3). The influence of surface preparation has been investigated on unannealed Mo/Pt/Au contacts and further improvements of the specific contact resistivities to as low as (8.7 ± 0.7) × 10~(-7) and (2.9 ± 1.7) × 10~(-8) Ω cm~2 have been achieved for n- and p-InGaSb, respectively.

机译：本文介绍了对Ti / Au，Ti / Pd / Au，Ti / Pt / Au，Mo / Au，Mo / Pt / Au和Pd / Mo / Pt / Au欧姆接触n-和p-的比较研究In_（0.65）Ga_（0.35）Sb。对于掺杂至2×10〜（18）cm〜（-3）的In_（0.65）Ga_（0.35）Sb：Te，显示出低于2×10〜（-6）Ωcm〜2的比接触电阻率p_c。对于掺杂为4.5×10〜（19）cm〜（-3）的In_（0.65）Ga_（0.35）Sb：C也实现了在10〜（-7）Ωcm〜2范围内的较低p_c。研究了表面处理对未退火Mo / Pt / Au接触的影响以及比接触电阻率进一步降低至（8.7±0.7）×10〜（-7）和（2.9±1.7）×10〜（ -8）n-和p-InGaSb分别达到Ωcm〜2。

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来源
《Journal of Vacuum Science & Technology》 |2010年第1期|p.17-20|共4页
作者
E. Mairiaux; L. Desplanque; X. Wallart; M. Zaknoune;
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作者单位

Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN), UMR-CNRS 8520, 59652 Villeneuve d'Ascq, France and Alcatel-Thales III-V Lab, 91461 Marcoussis, France;

Institut d'tlectronique de Microelectronique et de Nanotechnologie (IEMN), UMR-CNRS 8520, 59652 Villeneuve d'Ascq, France;

Institut d'tlectronique de Microelectronique et de Nanotechnologie (IEMN), UMR-CNRS 8520, 59652 Villeneuve d'Ascq, France;

Institut d'tlectronique de Microelectronique et de Nanotechnologie (IEMN), UMR-CNRS 8520, 59652 Villeneuve d'Ascq, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors [J] . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第1期

机译：使用Mo难熔金属改善In0.65Ga0.35Sb的欧姆接触并为6.3异质结双极晶体管进行表面处理
2. A 60-nm-thick enhancement mode In_(0.65)Ga_(0.35)As/InAs/In_(0.65)Ga_(0.35)As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications [J] . Faiz Aizad Fatah, Yueh-Chin Lin, Ren-Xuan Liu, Applied physics express . 2016,第2期

机译：采用Au / Pt / Ti非退火欧姆技术制造的60nm厚增强模式In_（0.65）Ga_（0.35）As / InAs / In_（0.65）Ga_（0.35）As高电子迁移率晶体管电源逻辑应用
3. Low-Temperature Atomic-Layer-Deposited High-κ: Dielectric for p-Channel In_(0.7)Ga_(0.3)As/GaAs_(0.35)Sb_(0.65) Heterojunction Tunneling Field-Effect Transistor [J] . Bijesh Rajamohanan, Dheeraj Mohata, Dmitry Zhemokletov, _Applied Physics Express . 2013,第10期

机译：低温原子层沉积高κ：p沟道In_（0.7）Ga_（0.3）As / GaAs_（0.35）Sb_（0.65）异质结隧穿场效应晶体管的介电常数
4. Characterization of InAlAs/In_(0.25)Ga_(0.75)As_(0.72)Sb_(0.28)/InGaAs Double Heterojunction Bipolar Transistors [C] . Chao-Min Chang, Shu-Han Chen, Sheng-Yu Wang, International Conference on Indium Phosphide and Related Materials . 2010

机译：InalAs / In_（0.25）Ga_（0.75）AS_（0.72）SB_（0.28）/ InGaAs双异质结双极晶体管
5. Palladium-germanium ohmic contact fabrication and characterization for heterojunction bipolar transistors with indium gallium arsenide emitter layer. [D] . Sadat Gousheh, Ahmad Reza. 1992

机译：具有砷化铟镓发射极层的异质结双极晶体管的钯-锗欧姆接触制造和表征。
6. Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme [O] . Niranjan S, Ivor Guiney, Colin J. Humphreys, 2020

机译：ALGAN / GAN高电子迁移率晶体管的无芳型嵌入式欧姆触点：蚀刻化学和金属方案的研究
7. In0.69Al0.31As0.41Sb0.59/ In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers [R] . 2010

机译：In0.69al0.31as0.41sb0.59 / In0.27Ga0.73sb双异质结双极晶体管，带Inas0.66sb0.34接触层

Improvement of Ohmic contacts to In_(0.65)Ga_(0.35)Sb using Mo refractory metal and surface preparation for 6.3 A heterojunction bipolar transistors

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