Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

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Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

机译：使用Mo难熔金属改善In0.65Ga0.35Sb的欧姆接触并为6.3异质结双极晶体管进行表面处理

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This article describes a comparative study of Ti/Au, Ti/Pd/Au, Ti/Pt/Au, Mo/Au, Mo/Pt/Au, and Pd/Mo/Pt/Au Ohmic contacts to both n- and p-In0.65Ga0.35Sb. For In0.65Ga0.35Sb:Te doped to 2×1018 cm-3, specific contact resistivities ρc below 2×10-6 Ω cm2 were demonstrated. Lower ρc in the 10-7 Ω cm2 range were also achieved for In0.65Ga0.35Sb:C doped to 4.5×1019 cm-3. The influence of surface preparation has been investigated on unannealed Mo/Pt/Au contacts and further improvements of the specific contact resistivities to as low as (8.7±0.7)×10-7 and (2.9±1.7)×10-8 Ω cm2 have been achieved for n- and p-InGaSb, respectively.

机译：本文介绍了对Ti / Au，Ti / Pd / Au，Ti / Pt / Au，Mo / Au，Mo / Pt / Au和Pd / Mo / Pt / Au欧姆接触n-和p-的比较研究In0.65Ga0.35Sb。对于掺杂至2×1018 cm-3的In0.65Ga0.35Sb：Te，显示出低于2×10-6Ω·cm2的比接触电阻率ρc。对于掺杂至4.5×1019 cm-3的In0.65Ga0.35Sb：C，也实现了在10-7Ω·cm2范围内的较低ρc。研究了表面处理对未退火的Mo / Pt / Au接触的影响，并进一步将比接触电阻率进一步降低至（8.7±0.7）×10-7和（2.9±1.7）×10-8Ω·cm2分别针对n和p-InGaSb实现。

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《Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures》 |2010年第1期|P.17-20|共4页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Improvement of Ohmic contacts to In_(0.65)Ga_(0.35)Sb using Mo refractory metal and surface preparation for 6.3 A heterojunction bipolar transistors [J] . E. Mairiaux, L. Desplanque, X. Wallart, Journal of Vacuum Science & Technology . 2010,第1期

机译：使用Mo难熔金属改善In_（0.65）Ga_（0.35）Sb的欧姆接触并为6.3 A异质结双极晶体管进行表面处理
2. A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications [J] . Jui-Chien Huang, Yueh-Chin Lin, Yu-Ling Tseng, Japanese journal of applied physics . 2010,第2issue1期

机译：具有可靠Pd / Ge / Cu欧姆接触的铜金属化InGaP / GaAs异质结双极晶体管，适用于电源应用
3. A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier [J] . Shang-Wen CHANG, Edward Yi CHANG, Cheng-Shih LEE, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2005,第28a32期

机译：使用非合金欧姆接触和铂扩散阻挡层的无金全铜化InP异质结双极晶体管
4. Surface morphology of metalorganic vapor phase epitaxy grown GaAs, GaInP for heterojunction bipolar transistor applications with nitrogen as the carrier gas [C] . Hsu, C.C., Xu, . 1999

机译：金属有机气相外延生长的GaAs，GaInP的表面形态，用于以氮为载气的异质结双极晶体管应用
5. Palladium-germanium ohmic contact fabrication and characterization for heterojunction bipolar transistors with indium gallium arsenide emitter layer. [D] . Sadat Gousheh, Ahmad Reza. 1992

机译：具有砷化铟镓发射极层的异质结双极晶体管的钯-锗欧姆接触制造和表征。
6. Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance [O] . Hsun-Ming Chang, Adam Charnas, Yu-Ming Lin, -1

机译：超低接触电阻的黑色磷场效应晶体管中的掺锗金属欧姆接触
7. Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors [O] . Zhou Lin, Leach Jacob H., Ni Xianfeng, 2010

机译：基于AlInN / AlN / GaN的异质结场效应晶体管的Ti / Al / Ni / Au欧姆接触
8. High Temperature Reliability of Refractory Metal Ohmic Contacts to Diamond.(Reannouncement with New Availability Information) [R] . Roser, M., Hewett, C. A. 1992

机译：钻石难熔金属欧姆接触的高温可靠性（重新公布新的可用性信息）

Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors

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