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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
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Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon

机译：硅上高真空扫描扩展电阻显微镜纳米接触的分析与建模

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Within this paper, the authors propose a refined high vacuum scanning spreading resistance microscopy (HV-SSRM) electromechanical nanocontact model based on experimental results as well as molecular dynamics (MD) simulation results. The formation under the tip of a nanometer-sized pocket of β-tin, a metastable metalliclike phase of silicon (also named Si-II), acting as a virtual probe is demonstrated. This gives a reasonable explanation for the superior SSRM spatial resolution as well as for the electrical properties at the Schottky-like SSRM contact. Moreover, the impact of the doping concentration on the plastic deformation of silicon for different species using micro-Raman combined with indentation experiments is studied. In order to elucidate the superior results of SSRM measurements when performed under high vacuum conditions, the impact of humidity on the mechanical deformation and Si-II formation is also analyzed using MD and SSRM experimental results.
机译：在本文中，作者根据实验结果和分子动力学（MD）模拟结果提出了一种改进的高真空扫描扩展电阻显微镜（HV-SSRM）机电纳米接触模型。证实了在纳米大小的β-锡袋尖端下的形成，β-锡是一种亚稳态的硅状金属相（也称为Si-II），可作为虚拟探针。这为合理的SSRM空间分辨率以及类似肖特基的SSRM触点的电性能提供了合理的解释。此外，结合显微压痕实验，研究了掺杂浓度对不同物种硅的塑性变形的影响。为了阐明在高真空条件下执行SSRM测量的优异结果，还使用MD和SSRM实验结果分析了湿度对机械变形和Si-II形成的影响。

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