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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films
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Effect of high substrate bias and hydrogen and nitrogen incorporation on density of states and field-emission threshold in tetrahedral amorphous carbon films

机译：高衬底偏压和氢氮掺入对四面体非晶碳膜态密度和场发射阈值的影响

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摘要

This article reports the influence of substrate bias during growth and of hydrogen and nitrogen incorporation on density of states [N (EF)] and field-emission threshold (Eturn-on) in tetrahedral amorphous carbon (ta-C) films, deposited using an S-bend filtered cathodic vacuum arc process. The variation in negative substrate bias from -20 to -200 V was found to initially lead to a small decrease in N (EF) and Eturn-on, and a small increase in the emission current density (J) at 12.5 V/μm in the case of as-grown ta-C films; beyond -200 V substrate bias there is a reversal in the trend. The values of N (EF)=1.3×1017 cm-3 eV-1, Eturn-on=8.3 V/μm, and J=6.19 mA/cm2 were observed at -200 V substrate bias. However at -300 V the properties were not very different from those at -200 V substrate bias and so with a view to use the higher energy, hydrogen and nitrogen incorporation studies were carried out in this condition. It was observed that there was further enhancement in properties with hydrogen and nitrogen incorporation. The best properties measured with in the range of hydrogen and nitrogen incorporation in the present study were N (EF)=8.0×1016 cm-3 eV-1, Eturn-on=7.6 V/μm, and J=23.7 mA/cm2, respectively.
机译：本文报道了在使用四面体非晶碳（ta-C）薄膜沉积过程中，衬底偏压在生长过程中以及氢和氮的掺入对四面体非晶碳（ta-C）薄膜中状态密度[N（EF）]和场发射阈值（Eturn-on）的影响。 S弯过滤阴极真空电弧工艺。负基板偏压从-20 V到-200 V的变化最初会导致N（EF）和Eturn-on的小幅下降，以及12.5 V /μm时的发射电流密度（J）的小幅上升。 ta-C薄膜的生长情况；超过-200 V的衬底偏置时，趋势出现了逆转。在-200V衬底偏压下观察到N（EF）＝ 1.3×1017cm-3 eV-1，Eturn-on ＝ 8.3V /μm和J ＝ 6.19mA / cm2。但是，在-300 V时，性能与-200 V衬底偏置时的性能差异不大，因此为了使用更高的能量，在此条件下进行了氢和氮掺入研究。观察到，通过引入氢和氮，性能进一步提高。在本研究中，在氢和氮掺入范围内测得的最佳性能为N（EF）= 8.0×1016 cm-3 eV-1，Eturn-on = 7.6 V /μm和J = 23.7 mA / cm2，分别。

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