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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs
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Influence of surface treatment and interface layers on electrical spin injection efficiency and transport in InAs

机译：表面处理和界面层对InAs中电自旋注入效率和传输的影响

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摘要

Spin-valve, weak localization/antilocalization, and scanned probe microscopy measurements are used to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs at 4.2 K. An electrically insulating barrier layer is found to be required to achieve nonzero spin injection efficiency, with a 3 nm Al2O3 electrically insulating barrier providing a spin injection efficiency of 5±2%. Conductive atomic force microscopy suggests that localized leakage through the InAs native oxide is sufficient to suppress spin-polarized current injection in the absence of a more highly insulating barrier layer. Spin scattering lengths are determined experimentally from both weak localization/antilocalization and spin-valve measurements. Spin and elastic scattering lengths of 230±20 and 85±5 nm, respectively, are measured, with a sulfur-based surface treatment increasing the spin scattering length to 250±20 nm and decreasing the elastic scattering length to 65±5 nm.
机译：自旋阀，弱定位/反定位和扫描探针显微镜测量用于研究基于硫的表面处理和电绝缘阻挡层对表面二维电子层的自旋注入和自旋输运的影响。在4.2 K时，p型InAs的电绝缘势垒必须达到3。导电原子力显微镜表明，在没有更高绝缘层的情况下，通过InAs天然氧化物的局部泄漏足以抑制自旋极化电流注入。自旋散射的长度是通过弱定位/反定位和自旋阀测量实验确定的。测得的自旋和弹性散射长度分别为230±20 nm和85±5 nm，使用硫基表面处理将自旋散射长度增加至250±20 nm，并将弹性散射长度减少至65±5 nm。

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