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首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Electron beam induced etching of silicon with SF6
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Electron beam induced etching of silicon with SF6

机译：电子束诱导用SF6蚀刻硅

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摘要

Electron beam induced etching (EBIE) with SF6 precursor molecules has been demonstrated as an approach to induce localized etching of Si with an etch yield of approximately 0.003 atoms/incoming electron. Further understanding of the EBIE mechanisms is presented through an analysis of the influence of the different electron beam parameters (beam energy and electron flux) and the effect of the sample bias on the EBIE rate. It is demonstrated that the etch rate increases with decreasing beam energy and with increasing electron flux to a saturation value. The latter is explained by a transition from an electron flux density limited process (at low current densities) to a gas supply limited process (at high current densities). The authors also demonstrate that a large etch rate enhancement is obtained by applying a positive sample bias. This is explained within the frame of a model outlining the role of the low secondary energy electrons in the electron stimulated etching process.
机译：已经证明使用SF6前体分子进行电子束诱导蚀刻（EBIE）是一种诱导Si局部蚀刻的方法，蚀刻产率约为0.003原子/传入电子。通过分析不同电子束参数（电子束能量和电子通量）的影响以及样品偏压对EBIE速率的影响，可以进一步了解EBIE机理。已经证明，蚀刻速率随着束能量的减少以及电子通量的增加而增加，直至达到饱和值。后者通过从电子通量密度限制过程（低电流密度）到气体供应限制过程（高电流密度）的过渡来解释。作者还证明，通过施加正的样品偏压可以获得较大的蚀刻速率提高。在模型框架中对此进行了解释，该模型概述了低二次能电子在电子激发蚀刻过程中的作用。

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