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Wavelength-specific reflections: A decade of extreme ultraviolet actinic mask inspection research

机译:特定波长的反射:极端紫外线光化掩模检查研究十年

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摘要

Mask inspection is essential for the success of any pattern transfer lithography technology, and extreme ultraviolet lithography (EUVL), in particular, faces unique challenges. EUV masks' resonant-reflective multilayer coatings have a narrow, wavelength-specific response that dramatically affects the way that defects appear, or disappear, at various illuminating wavelengths. Furthermore, the ever-shrinking size of "critical" defects limits the potential effectiveness of deep ultraviolet inspection techniques over time. Researchers pursuing numerous ways of finding and characterizing defects on extreme ultraviolet (EUV) masks and have met with varying degrees of success. Their lessons inform the current, urgent exploration to select the most effective techniques for high-volume manufacturing. Ranging from basic research and demonstration experiments to commercial inspection tool prototypes, the authors survey the recent history of work in this area, including sixteen projects in Europe, Asia, and America. Solutions range from scanning beams to microscopy, darkfield imaging to pattern transfer.
机译:掩模检查对于任何图案转移光刻技术的成功都是至关重要的,特别是极紫外光刻(EUVL)面临着独特的挑战。 EUV掩模的共振反射多层涂层具有狭窄的,特定于波长的响应,极大地影响了缺陷在各种照明波长下出现或消失的方式。此外,随着时间的推移,“关键”缺陷的尺寸不断缩小,限制了深紫外线检测技术的潜在有效性。研究人员寻求多种方法来发现和表征极紫外(EUV)掩模上的缺陷,并获得了不同程度的成功。他们的课程为当前的紧迫探索提供了选择,以选择最有效的技术进行大批量生产。从基础研究和演示实验到商业检验工具原型,作者调查了该领域的最新工作历史,包括在欧洲,亚洲和美洲的16个项目。解决方案的范围从扫描光束到显微镜,从暗场成像到图案转移。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6E1-C6E10|共10页
  • 作者

    K. A. Goldberg; I. Mochi;

  • 作者单位

    Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720;

    Lawrence Berkeley National Laboratory, Cyclotron Road, Berkeley, California 94720;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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