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Impact of development chemistry on extreme ultraviolet resist performance

机译：显影化学对极紫外抗蚀性能的影响

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摘要

Tetrabutyl ammonium hydroxide (TBAH) has recently been identified as a promising material for aqueous base development of extreme ultraviolet (EUV) photoresists. In this article, the merits and applicability of this new material are being further investigated. In general, TBAH has no impact on line width roughness or sensitivity performance when compared to conventional tetramethyl ammonium hydroxide. It does, however, improve the pattern collapse performance of several resists. Since pattern collapse is an important failure mechanism for EUV, TBAH also improves ultimate resolution of these materials and allows overexposure to target smaller critical dimensions. In contrast, several other resist platforms show no impact of TBAH on their pattern collapse behavior. A mechanism is proposed to explain this observation based on modification of the chemical surface properties during development. This mechanism is supported by independent contact angle measurements.
机译：四丁基氢氧化铵（TBAH）最近已被确认为极紫外（EUV）光刻胶的水性基础显影剂。本文将进一步研究这种新材料的优点和适用性。通常，与传统的四甲基氢氧化铵相比，TBAH对线宽粗糙度或灵敏度性能没有影响。但是，它确实提高了几种抗蚀剂的图案塌陷性能。由于图案塌陷是EUV的重要失效机制，因此TBAH还可以提高这些材料的最终分辨率，并且可以针对较小的临界尺寸进行过度曝光。相反，其他几个抗蚀剂平台对它们的图案塌陷行为没有显示TBAH。根据显影过程中化学表面性质的改变，提出了一种机制来解释这种观察。该机制由独立的接触角测量支持。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6S1-C6S5|共5页
  • 作者

    Roel Gronheid;

  • 作者单位

    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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