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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Flare-variation compensation for 32 nm line and space pattern for device manufacturing on extreme-ultraviolet lithography
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Flare-variation compensation for 32 nm line and space pattern for device manufacturing on extreme-ultraviolet lithography

机译：极紫外光刻设备制造的32 nm线和间隔图案的光斑变化补偿

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摘要

One of the critical issues in extreme-ultraviolet lithography (EUVL) is flare, which degrades the contrast of aerial images and control of the critical dimension (CD) across the exposure field and is related to the density of the absorber layout. It is necessary, therefore, to determine a process window under flare-variation compensation (FVC), taking into account residual FVC error and estimated resist properties. In this article, the authors specify a process window for 32 nm line/space patterns under a FVC framework based on rigorous aerial-image simulations. FVC, by means of proper mask resizing, can provide an exposure latitude of up to 23% or more. A 0.5 nm grid can be used for mask-data preparation due to the low mask-enhancement error factor of EUVL. In addition, resist blur, estimated by convolving a Gaussian function to aerial images, has a significant impact and the standard deviation of the blur needs to the kept below 7 nm to obtain a usable process window, considering mask CD error and the process margin for flare levels of 0%-10%.
机译：极紫外光刻（EUVL）的关键问题之一是眩光，它会降低航空图像的对比度以及整个曝光场的临界尺寸（CD）的控制，并且与吸收体布局的密度有关。因此，有必要在考虑杂散FVC误差和估计的抗蚀剂特性的情况下确定耀斑变化补偿（FVC）下的工艺窗口。在本文中，作者基于严格的航空影像模拟为FVC框架下的32 nm线/空间图案指定了处理窗口。通过适当调整掩膜大小，FVC可以提供高达23％或更高的曝光范围。由于EUVL的掩模增强误差因子低，因此可以将0.5 nm的栅格用于掩模数据准备。此外，通过将高斯函数卷积到航拍图像来估计抗蚀剂模糊，这会产生重大影响，并且需要考虑掩模CD的误差和工艺裕度，将模糊的标准偏差保持在7 nm以下才能获得可用的处理窗口。耀斑含量为0％-10％。

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