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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Fabrication of single-crystalline LiTaO_3 film on silicon substrate using thin film transfer technology
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Fabrication of single-crystalline LiTaO_3 film on silicon substrate using thin film transfer technology

机译:利用薄膜转移技术在硅衬底上制备单晶LiTaO_3膜

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摘要

High-quality LiTaO_3 thin films on silicon substrates are important for the application of silicon-based optoelectronic integration technology. In this article, single-crystalline LiTaO_3 thin films were achieved by wafer-bonding and layer-transfer technology. Cross-sectional transmission electronic microscopy (TEM) and x-ray diffraction results indicate that the LiTaO_3 thin films are single crystalline and have good structural quality. After hydrogen implantation and annealing, the surfaces of LiTaO_3 samples were investigated in detail using optical microscopy and TEM. Results show that dose and implantation energy of hydrogen can both have effect on the cleavage of a thin surface section from a LiTaO_3 wafer.
机译:硅基板上的高质量LiTaO_3薄膜对于基于硅的光电集成技术的应用至关重要。在本文中,通过晶片键合和层转移技术获得了单晶LiTaO_3薄膜。截面透射电子显微镜(TEM)和X射线衍射结果表明,LiTaO_3薄膜为单晶且具有良好的结构质量。氢注入和退火后,使用光学显微镜和TEM对LiTaO_3样品的表面进行了详细研究。结果表明,氢气的剂量和注入能量都可以影响LiTaO_3晶片的薄表面切割。

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