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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Enhanced local oxidation of silicon using a conducting atomic force microscope in water
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Enhanced local oxidation of silicon using a conducting atomic force microscope in water

机译：使用导电原子力显微镜在水中增强硅的局部氧化

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摘要

A new mechanism for direct-write surface scanning probe lithography is considered based on electrodynamic cavitation in a true liquid environment. Oxide layers grown on Si/SiO_2/H_2O and Si/SiO_2/Au/H_2O interfaces reached maximum heights of 130 and 690 nm, respectively. These structures represent a full order of magnitude increase in height over oxides grown in air under similar voltages and time durations, suggesting a unique reaction mechanism. Time-dependent studies indicated that oxide structures generated in water grew by discrete intervals and occasionally grew at a significant distance from the tip, effects that have not been previously reported. The possibility of electrodynamic cavitation-assisting silicon oxide growth under aqueous conditions is considered, potentially opening up opportunities for formation of nanoscale surface structures based on largely underutilized cavitation-induced (e.g., sonochemical) reactions.
机译：基于在真实液体环境中的电蚀现象，考虑了一种直接写入表面扫描探针光刻的新机制。在Si / SiO_2 / H_2O和Si / SiO_2 / Au / H_2O界面上生长的氧化物层分别达到130和690 nm的最大高度。这些结构代表了在相似的电压和持续时间下，空气中生长的氧化物的高度增加了整整一个数量级，表明了独特的反应机理。随时间变化的研究表明，水中产生的氧化物结构以不连续的间隔生长，并且有时在距尖端很远的距离处生长，这种影响以前没有报道过。考虑了在水性条件下电动空化辅助氧化硅生长的可能性，这潜在地为基于很大程度上未充分利用的空化诱导的（例如声化学）反应提供了形成纳米级表面结构的机会。

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