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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Effect of low Ge content on B diffusion in amorphous SiGe alloys
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Effect of low Ge content on B diffusion in amorphous SiGe alloys

机译：低Ge含量对非晶SiGe合金中B扩散的影响

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摘要

Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, and 100 at. % Ge) were grown on Si. After growth the layer was amorphized to a depth of 0.8 μm using a 500 keV, 5 × 10~(15) ion/cm~2 Si~+ implant at 77 K. Next a 500 eV, 1 × 10~(15) ions/cm~2 B~+ implant was introduced. The amorphous SiGe was recrystallized at temperatures between 300 and 600 ℃ and the B diffusion during solid phase epitaxial regrowth was studied using dynamic secondary ion mass spectrometry. Comparison of B diffusivities for amorphous Si and amorphous Si_(0.88)Ge_(0.12) revealed similar activation energies (2.7 and 2.8 eV, respectively) and preexponential factors (0.8 and 4.8 cm~2/s, respectively). The negligible change in B diffusion in amorphous SiGe at low Ge concentrations is similar to reports on B diffusivity for strain-relaxed crystalline SiGe alloys with Ge content. These results suggest that Ge is not an effective trap for B in the amorphous phase.
机译：众所周知，B在非晶硅中的扩散比晶体Si中的扩散高四个数量级。低浓度的Ge对非晶相中B扩散的影响尚不清楚。在Si上生长1.5微米厚的各种SiGe合金（0、6、12和100 at。％Ge）的松弛层。生长后，使用500 keV，5×10〜（15）离子/ cm〜2 Si〜+注入物在77 K下将层非晶化至0.8μm的深度。接下来是500 eV，1×10〜（15）离子。引入/ cm〜2 B〜+注入。非晶SiGe在300至600℃之间再结晶，并利用动态二次离子质谱技术研究了固相外延再生中的B扩散。比较非晶硅和非晶Si_（0.88）Ge_（0.12）的B扩散率，发现了相似的活化能（分别为2.7和2.8 eV）和指数前因数（分别为0.8和4.8 cm〜2 / s）。在低Ge浓度下，非晶SiGe中B扩散的变化可以忽略不计，这与关于应变松弛的具有Ge含量的结晶SiGe合金中B扩散率的报道相似。这些结果表明，Ge不是非晶相中B的有效陷阱。

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