Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Hsin-Chiang You; Chi-Chang Wu; Fu-Hsiang Ko; Tan-Fu Lei; Wen-Luh Yang

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Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

机译：新型共存溶胶-凝胶衍生的聚氧化硅-氮化物-氧化硅-硅型存储器

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摘要

The authors use a very simple sol-gel spin coating method at 900 ℃ and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide-nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (ⅰ) HfO_2 thin film, (ⅱ) hafnium silicate nanocrystal, and (ⅲ) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

机译：作者使用一种非常简单的溶胶-凝胶旋涂方法，在900℃的温度下进行1分钟的快速热退火，从而制造出三种不同的聚氧化硅-氮化物-氧化物-硅型闪存。根据（current）HfO_2薄膜，（ⅱ）硅酸ha纳米晶体和（ⅲ）硅酸ha和硅酸锆共存的存储器电流，由漏极电流与施加的栅极电压的关系曲线得出的存储器窗口分别为3、3.3和4 V，分别。连同对这些制造的器件的栅极干扰和漏极干扰的测量结果，共存的纳米晶体器件显示出比薄膜型存储器和单纳米晶体型存储器更好的可靠性。

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《Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures》 |2007年第6期|p.2568-2571|共4页
作者
Hsin-Chiang You; Chi-Chang Wu; Fu-Hsiang Ko; Tan-Fu Lei; Wen-Luh Yang;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类工程物理学;
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Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

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