...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials Research Innovations >Characterisation and properties of Cu_2ZnSnS_4 thin films synthesised by sputtering from an alloy target
【24h】

Characterisation and properties of Cu_2ZnSnS_4 thin films synthesised by sputtering from an alloy target

机译：合金靶溅射合成Cu_2ZnSnS_4薄膜的表征与性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Cu_2ZnSnS_4 (CZTS) thin films were synthesised on glass substrates by sulphurising sputtered metallicrnprecursors in H_2S + N_2 atmosphere at 500 ℃. The influences of the radio frequency (RF) sputteringrnpower on the structure, surface morphology, optical and electrical properties of the thin films wererninvestigated. Scanning electron microscopy, X-ray diffraction, Raman and UV–vis NIR spectroscopyrnwere used to characterise the films. All the CZTS thin films exhibited a dominant kesterite structure.rnWith increasing sputtering power, secondary phases in the films reduced, and the surface becamernmore compact. The optimum quality films with poor-Cu and rich-Zn were obtained when the sputteringrnpower was 90 W, and the optical band gap, carrier concentration, resistivity and mobility were 1.47 eV,rn2.07 × 10~(18) cm~(−3), 2.37 Ω cm and 1.38 cm~2 s~(−1) v~(−1), respectively. The optical and electrical properties ofrnthe CZTS thin films in relation to the secondary phases were discussed.
机译：在H_2S + N_2气氛中500℃硫化溅射的金属前驱体，在玻璃基板上合成了Cu_2ZnSnS_4（CZTS）薄膜。研究了射频（RF）溅射功率对薄膜结构，表面形貌，光学和电学性质的影响。扫描电子显微镜，X射线衍射，拉曼光谱和紫外可见NIR光谱用于表征薄膜。所有的CZTS薄膜均表现出主要的钙钛矿结构。随着溅射功率的增加，薄膜中的第二相减少，表面变得更加致密。当溅射功率为90 W时，获得了Cu和Zn含量丰富的最佳薄膜，其光学带隙，载流子浓度，电阻率和迁移率分别为1.47 eV，rn2.07×10〜（18）cm〜（- 3），2.37Ωcm和1.38 cm〜2 s〜（-1）v〜（-1）。讨论了CZTS薄膜相对于第二相的光学和电学性质。

著录项

  • 来源
    《Materials Research Innovations》 |2017年第2期|97-101|共5页
  • 作者

    Haifang Zhou; Shuying Cheng; Pengyi Zhao; Jinling Yu; Hongjie Jia;

  • 作者单位

    School of Physics & Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350116, P.R. China,Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering;

    Changzhou 213164, P.R. China;

    School of Physics & Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350116, P.R. China,Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering;

    Changzhou 213164, P.R. China;

    School of Physics & Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350116, P.R. China;

    School of Physics & Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350116, P.R. China,Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering;

    Changzhou 213164, P.R. China;

    School of Physics & Information Engineering, Institute of Micro/Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350116, P.R. China,Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering;

    Changzhou 213164, P.R. China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Cu_2ZnSnS_4 thin films; RF-sputtering power; Opto-electrical properties;

    机译：Cu_2ZnSnS_4薄膜;射频溅射功率;光电性能;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号