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首页> 外文期刊>Materials Science and Engineering >Optical and electrical properties of thermally evaporated Se_(90)Sb_(10) thin film
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Optical and electrical properties of thermally evaporated Se_(90)Sb_(10) thin film

机译：热蒸发Se_（90）Sb_（10）薄膜的光电性能

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Chalcogenide Se90Sb10thin films are deposited by thermal evaporation from the bulk alloy. X-ray diffraction examination for the annealed films shows the amorphous-crystalline transformation. This is beneficial for optical disk data storage technology. The crystallinity is improved by increasing the annealing temperature. The films annealed at relatively low temperatures exhibit highly transparence reaching to about 90% at incident light of wavelength of 900 nm. The as-prepared and annealed Se90Sb10films reveal an indirect allowed optical transition. The annealed film at 473 K has an optical band gap of 1.676 eV which is suitable value for solar cell as photovoltaic application. Both the indirect optical energy band gap (Eg) and the oscillator energy (Eo) decrease whereas the oscillator strength (Ed) increases with increasing the annealing temperature. The annealing increases the conductivity and decreases the activation energy for conduction resulting in enhancement of film properties for adapting to solar cells.
机译：通过热蒸发从块状合金中沉积硫属元素化物Se90Sb10thin薄膜。退火膜的X射线衍射检查显示出无定形晶体转变。这对于光盘数据存储技术是有益的。通过提高退火温度来改善结晶度。在较低温度下退火的薄膜在900 nm波长的入射光下具有很高的透明度，达到约90％。制备和退火的Se90Sb10薄膜显示出间接允许的光学跃迁。 473 K的退火膜的光学带隙为1.676 opticaleV，适合作为光伏应用的太阳能电池使用。间接光能带隙（Eg）和振荡器能量（Eo）均降低，而振荡器强度（Ed）随着退火温度的升高而增加。退火增加了电导率并降低了用于传导的活化能，从而增强了膜特性以适应太阳能电池。

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