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首页> 外文期刊>Materials Science and Engineering >Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells
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Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

机译：氮化硅（SiN）的氩等离子体处理可改善c-Si太阳能电池上的抗反射涂层

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摘要

Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH_4), ammonia (NH_3) and hydrogen (H_2) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si-N, Si-O and N-H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.
机译：本文介绍了氩等离子体处理的氮化硅层的抗反射性能及其对晶体硅太阳能电池的影响。氢化氮化硅（a-SiN：H）层已通过等离子增强化学气相沉积（PECVD）使用硅烷（SiH_4），氨气（NH_3）和氢气（H_2）以及氩气的混合物沉积在硅基板上等离子处理。光学分析表明，在氩等离子体处理氮化硅层之后，反射率显着降低。 FESEM显示氮化硅膜表面上的纳米结构，而FTIR显示Si-N，Si-O和N-H键的变化。另一方面，椭圆偏振法显示折射率的变化和双层的形成。最后，已经制造了具有所述抗反射涂层的c-Si太阳能电池。外部量子效率表明，相对于基准效率16.58％，短路电流密度相对提高了2.72％，转换效率相对提高了4.46％。

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  • 来源
    《Materials Science and Engineering》 |2017年第1期|29-36|共8页
  • 作者

    Hemanta Ghosh; Suchismita Mitra; Hiranmay Saha; Swapan Kumar Datta; Chandan Banerjee;

  • 作者单位

    Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103, India;

    Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103, India;

    Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103, India;

    Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103, India;

    Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science & Technology, Shibpur, Howrah 711103, India;

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  • 正文语种 eng
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  • 关键词

    Argon plasma treatment; Silicon nitride; Silicon oxynitride; Double layer anti-reflection coating; PECVD; Solar cell;

    机译：氩等离子体处理;氮化硅;氮氧化硅;双层抗反射涂层;PECVD;太阳能电池;

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