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Identification of the dissociative and kick-out diffusion mechanisms of Zn diffusion in GaAs by photoluminescence analysis

机译:通过光致发光分析鉴定GaAs中Zn扩散的解离和踢出扩散机理

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摘要

Most investigations on Zn diffusion in GaAs were processed using the Zn-As alloy sources to prevent the As atoms from escaping GaAs wafers, while we found that the Zn diffusion would change fundamentally if Zn-Ga alloy sources were used. The Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface region in Zn profiles, thus converting a kink-and-tail profile into a box profile. The photoluminescence (PL) analysis was used to identify the diffusion mechanisms. The Ga vacancy defects were found in the surface region of the kink-and-tail profile, indicating that the dissociative mechanism dominated; the PL spectrum in the tail region of kink-and-tail profile and the main region of box profile showed the same signals, no Ga vacancy defects were found, thus the kick-out mechanism dominated.
机译:多数关于GaAs中Zn扩散的研究都是使用Zn-As合金源进行的,以防止As原子逸出GaAs晶片,而我们发现,如果使用Zn-Ga合金源,则Zn扩散将发生根本变化。来自扩散源的Ga原子抑制了Zn轮廓中高浓度表面区域的形成,从而将扭结和尾部轮廓转换为盒形轮廓。使用光致发光(PL)分析来确定扩散机理。在扭折和尾部轮廓的表面区域中发现了Ga空位缺陷,这表明解离机理占主导。纽结和尾部轮廓的尾部区域和盒状轮廓的主要区域的PL光谱显示相同的信号,未发现Ga空位缺陷,因此起球机理占主导。

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  • 来源
    《Materials Science and Engineering》 |2015年第7期|1-4|共4页
  • 作者单位

    Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei 230027, People's Republic of China;

    Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei 230027, People's Republic of China;

    Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei 230027, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zn diffusion; GaAs; Mechanism; Photoluminescence analysis;

    机译:锌扩散砷化镓;机制;光致发光分析;

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